High-power and reliable operation of vertical light-emitting diodes on bulk GaN von Cao, X. A., Arthur, S. D.

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Microstructural origin of leakage current in GaN/InGaN light-emitting diodes von Cao, X.A, Teetsov, J.A, Shahedipour-Sandvik, F, Arthur, S.D

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Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates von Cao, X. A., LeBoeuf, S. F., D’Evelyn, M. P., Arthur, S. D., Kretchmer, J., Yan, C. H., Yang, Z. H.

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Growth and characterization of GaN PiN rectifiers on free-standing GaN von Cao, X. A., Lu, H., LeBoeuf, S. F., Cowen, C., Arthur, S. D., Wang, W.

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Outcome implications for the timing of bilateral total knee arthroplasties von RITTER, M, MAMLIN, L. A, MELFI, C. A, KATZ, B. P, FREUND, D. A, ARTHUR, D. S

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Stacking-fault formation and propagation in 4H-SiC PiN diodes von Stahlbush, R. E., Fatemi, M., Fedison, J. B., Arthur, S. D., Rowland, L. B., Wang, S.

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Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes von Twigg, M. E., Stahlbush, R. E., Fatemi, M., Arthur, S. D., Fedison, J. B., Tucker, J. B., Wang, S.

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Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes von Cao, X.A., Lu, H., Kaminsky, E.B., Arthur, S.D., Grandusky, J.R., Shahedipour-Sandvik, F.

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High quality interlayer dielectric for 4H–SiC DMOSFETs von Okayama, T, Arthur, S D, Waldrab, P, Rao, Mulpuri V

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Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs von Okayama, T., Arthur, S.D., Garrett, J.L., Rao, M.V.

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Stacking-fault formation and propagation in 4H-SiC PiN diodes von Stahlbush, R. E., Fatemi, M., Fedison, J. B., Arthur, S. D., Rowland, L. B., Wang, S.

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Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodes von MERFELD, D. W, CAO, X. A, LEBOEUF, S. F, ARTHUR, S. D, KRETCHMER, J. W, D, M. P, EVELYN

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Partial dislocations and stacking faults in 4H-SiC PiN diodes von TWIGG, M. E, STAHLBUSH, R. E, FATEMI, M, ARTHUR, S. D, FEDISON, J. B, TUCKER, J. B, WANG, S

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Cathodoluminescence mapping and selective etching of defects in bulk GaN von Lu, Hai, Cao, X.A., LeBoeuf, S.F., Hong, H.C., Kaminsky, E.B., Arthur, S.D.

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Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm von Cao, X.A., Yan, C.H., D’Evelyn, M.P., LeBoeuf, S.F., Kretchmer, J.W., Klinger, R., Arthur, S.D., Merfeld, D.W.

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Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses von Cao, X.A., Sandvik, P.M., LeBoeuf, S.F., Arthur, S.D.

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COMPARISON OF RECOVERY FROM ANAESTHESIA INDUCED IN CHILDREN WITH EITHER PROPOFOL OR THIOPENTONE von RUNCIE, C.J., MACKENZIE, S.J., ARTHUR, D.S., MORTON, N.S.

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Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes von Fatemi, M., Arthur, Steve, Fedison, Jeffery B., Stahlbush, Robert E., Wang, Shao Ping, Twigg, Mark E., Tucker, Jesse B.

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Structure-property relationship in a thin film composite reverse osmosis membrane von Arthur, Samuel D.

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Structural Properties and Electrical Characteristics of Homoepitaxial GaN PiN Diodes von Lu, H., Larsen, M., Cao, X.A., Arthur, Steve

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