Self-heating effects in silicon carbide MESFETs von Royet, A.S., Ouisse, T., Cabon, B., Noblanc, O., Arnodo, C., Brylinski, C.

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Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer von Arnodo, C., Dua, Christian, Noblanc, Olivier, Chartier, E., Brylinski, Christian

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Characterization of ohmic and Schottky contacts on SiC von Kakanakova-Georgieva, A., Marinova, Ts, Noblanc, O., Arnodo, C., Cassette, S., Brylinski, C.

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Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs von Noblanc, O, Arnodo, C, Dua, C, Chartier, E, Brylinski, C

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Nickel based ohmic contacts on SiC von Marinova, Ts, Kakanakova-Georgieva, A., Krastev, V., Kakanakov, R., Neshev, M., Kassamakova, L., Noblanc, O., Arnodo, C., Cassette, S., Brylinski, C., Pecz, B., Radnoczi, G., Vincze, Gy

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TEM study of Ni and Ni2Si ohmic contacts to SiC von Pécz, B., Radnóczi, G., Cassette, S., Brylinski, C., Arnodo, C., Noblanc, O.

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Microwave power MESFET on 4H-SiC von Noblanc, O., Chartier, E., Arnodo, C., Brylinski, C.

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Interface chemistry of WN/4H–SiC structures von Kakanakova-Georgieva, A, Kassamakova, L, Marinova, Ts, Kakanakov, R, Noblanc, O, Arnodo, C, Cassette, S, Brylinski, C

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XPS characterization of tungsten-based contact layers on 4H–SiC von Kakanakova-Georgieva, A, Marinova, Ts, Noblanc, O, Arnodo, C, Cassette, S, Brylinski, C

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Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers von Noblanc, Olivier, Arnodof, C., Chartier, E., Brylinski, Christian

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Thermostable Ti/Au/Pt/Ti Schottky contacts to n-type 4H-SiC von Kassamakova, L, Kakanakova-Georgieva, A, Kakanakov, R, Marinova, Ts, Kassamakov, I, Djambova, Tz, Noblanc, O, Arnodo, C, Cassette, S, Brylinski, C

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Interface chemistry of a Ti/Au/Pt/Ti/SiC structure von Kakanakova-Georgieva, A., Marinova, Ts, Noblanc, O., Arnodo, C., Cassette, S., Brylinski, C.

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Physical and Electrical Characterization of WN Schottky Contacts on 4H-SiC von Cassette, S., Marinova, Ts, Noblanc, Olivier, Arnodof, C., Radnóczi, György Z., Brylinski, Christian, Kakanakova-Georgieva, A., Kabanakov, R., Sulyok, A., Kassamakova, Liliana, Pécz, Béla

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GaAs MESFET ICs for gigabit logic applications von Nuzillat, G., Perea, E.H., Bert, G., Damay-Kavala, F., Gloanec, M., Peltier, M., Ngu, T.P., Arnodo, C.

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High-speed GaAs static random-access memory von Bert, G., Morin, J.-P., Nuzillat, G., Arnodo, C.

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High-Speed GaAs Static Random-Access Memory von Bert, G., Morin, J.-P., Nuzillat, G., Arnodo, C.

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Two-dimensional particle modeling of submicrometer gate GaAs FET's near pinchoff von Pone, J.-F., Castagne, R.C., Courat, J.-P., Arnodo, C.

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An E-Beam Fabricated GaAs D-Type Flip-Flop IC von Gloanec, M., Nuzillat, G., Arnodo, C., Peltier, M.

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A GaAs low-power normally-on 4-bit ripple carry adder von Perea, E.H., Damay-Kavala, F., Nuzillat, G., Arnodo, C.

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High-speed low-power logic ICs using quasi-normally-off GaAs MESFETs von Nuzillat, G., Bert, G., Damay-Kavala, F., Arnodo, C.

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