Development of a Monolithic Active Pixel Sensor Using SOI Technology With a Thick Device Layer von Marczewski, J., Grabiec, P., Kucharski, K., Tomaszewski, D., Kucewicz, W., Kusiak, T., Niemiec, H., Sapor, M., Ruddell, F.H., Armstrong, B.M., Gamble, H.S., Loster, B.W., Majewski, S.

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Effects of tacrolimus (FK506) on human insulin gene expression, insulin mRNA levels, and insulin secretion in HIT-T15 cells von Redmon, J B, Olson, L K, Armstrong, M B, Greene, M J, Robertson, R P

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Fermi level de-pinning of aluminium contacts to n -type germanium using thin atomic layer deposited layers von Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M., McNeill, D. W.

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Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates von McNeill, D. W., Bhattacharya, S., Wadsworth, H., Ruddell, F. H., Mitchell, S. J. N., Armstrong, B. M., Gamble, H. S.

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Optimisation and scaling of interfacial GeO2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO2 von Murad, S.N.A., Baine, P.T., McNeill, D.W., Mitchell, S.J.N., Armstrong, B.M., Modreanu, M., Hughes, G., Chellappan, R.K.

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Investigation into the selectivity of CVD iron from Fe(CO) 5 precursor on various metal and dielectric patterned substrates von Bain, M.F., Low, Y.H., Bien, D.C.S., Montgomery, J.H., Armstrong, B.M., Gamble, H.S.

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SiGe HBTs on bonded SOI incorporating buried silicide layers von Bain, M., El Mubarek, H.A.W., Bonar, J.M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B.M., Hemment, P.L.F., Hall, S., Ashburn, P.

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Ultralow silicon substrate noise crosstalk using metal Faraday cages in an SOI technology von Stefanou, S., Hamel, J.S., Baine, P., Bain, M., Armstrong, B.M., Gamble, H.S., Kraft, M., Kemhadjian, H.A.

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Selective deposition of CVD iron on silicon dioxide and tungsten von Low, Y.H., Bain, M.F., Bien, D.C.S., Montgomery, J.H., Armstrong, B.M., Gamble, H.S.

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Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect tran... von Gajula, D. R., McNeill, D. W., Coss, B. E., Dong, H., Jandhyala, S., Kim, J., Wallace, R. M., Armstrong, B. M.

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Germanium on sapphire substrates for system on a chip von Gamble, H.S., Armstrong, B.M., Baine, P.T., Low, Y.H., Rainey, P.V., Low, Y.W., McNeill, D.W., Mitchell, S.J.N., Montgomery, J.H., Ruddell, F.H.

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Composition and stress analysis in Si structures using micro-raman spectroscopy von McCarthy, J., Perova, T. S., Moore, R. A., Bhattacharya, S., Gamble, H., Armstrong, B. M.

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Cross-talk suppression in SOI substrates von Baine, P., Jin, M., Gamble, H.S., Armstrong, B.M., Linton, D., Mohammed, F.

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Tungsten silicide contacts to polycrystalline silicon and silicon–germanium alloys von Srinivasan, G., Bain, M.F., Bhattacharyya, S., Baine, P., Armstrong, B.M., Gamble, H.S., McNeill, D.W.

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Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples von Wasyluk, J., Rainey, P. V., Perova, T. S., Mitchell, S. J. N., McNeill, D. W., Gamble, H. S., Armstrong, B. M., Hurley, R.

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Surface electromigration in copper interconnects von McCusker, N.D, Gamble, H.S, Armstrong, B.M

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Electrical characterization of SOI substrates incorporating WSix ground planes von BAIN, M, JIN, M, LOH, S. H, BAINE, P, ARMSTRONG, B. M, GAMBLE, H. S, MCNEILL, D. W

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Low-temperature plasma-enhanced chemical vapor deposition of tungsten and tungsten nitride von BAIN, M. F, ARMSTRONG, B. M, GAMBLE, H. S

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Effect of deposition temperature on the formation of CoSi2 through the rapid thermal annealing of CVD cobalt von Bain, M.F., Deo, N., Armstrong, B.M., Gamble, H.S.

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Determination of band offsets in strained-Si heterolayers von Maiti, C.K., Samanta, S.K., Chatterjee, S., Dalapati, G.K., Bhattacharya, S., Armstrong, B.M., Gamble, H.S., McCarthy, J., Perova, T.S., Moore, R.A.

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