Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures von Van den Berg, J. A., Armour, D. G., Zhang, S., Whelan, S., Ohno, H., Wang, T.-S., Cullis, A. G., Collart, E. H. J., Goldberg, R. D., Bailey, P., Noakes, T. C. Q.

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The interaction between Xe and F in Si (100) pre-amorphised with 20 keV Xe and implanted with low energy BF2 von Werner, M, Van Den Berg, J A, Armour, D G, Carter, G, Feudel, T, Herden, M, Bersani, M, Giubertoni, D, Bailey, P, Noakes, T C Q

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Measurement and modelling of the bulk plasma in magnetron sputtering sources von Bradley, J.W, Arnell, R.D, Armour, D.G

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Performance of mass analyzed, low‐energy, dual ion beam system for materials research von Al‐Bayati, A. H., Marton, D., Todorov, S. S., Boyd, K. J., Rabalais, J. W., Armour, D. G., Gordon, J. S., Duller, G.

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Design considerations for low damage process plasmas von Rahman, M., Deng, L.G., Boyd, A., Ribayrol, A., Wilkinson, C.D.W., van den Berg, J.A., Armour, D.G.

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Si ultrashallow p+n junctions using low-energy boron implantation von BOUSETTA, A, VAN DEN BERG, J. A, ARMOUR, D. G, ZALM, P. C

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Shallow BF2 implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F von Werner, M., van den Berg, J. A., Armour, D. G., Carter, G., Feudel, T., Herden, M., Bersani, M., Giubertoni, D., Ottaviano, L., Bongiorno, C., Mannino, G., Bailey, P., Noakes, T. C. Q.

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Damage accumulation and dopant migration during shallow As and Sb implantation into Si von Werner, M., van den Berg, J.A., Armour, D.G., Vandervorst, W., Collart, E.H.J., Goldberg, R.D., Bailey, P., Noakes, T.C.Q.

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Theoretical and experimental studies of the broadening of dilute delta-doped Si spikes in GaAs during SIMS depth profiling von Badheka, R., Wadsworth, M., Armour, D. G., van den Berg, J. A., Clegg, J. B.

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Radiation damage in silicon (001) due to low energy (60–510 eV) argon ion bombardment von Al-Bayati, Amir H., Orrman-Rossiter, Kevin G., Badheka, Ranjan, Armour, D.G.

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Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship von Berg, J. A. van den, Carter, G., Armour, D. G., Werner, M., Goldberg, R. D., Collart, E. J. H., Bailey, P., Noakes, T. C. Q.

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Oscillatory evolution of an ion bombarded InSb(100) surface von Evdokimov, I.N., Valizadeh, R., Armour, D.G., Richardson, N.V., McConville, C.F.

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Langmuir probe analysis of a BF3 discharge in a high current ion source von Mefo, J., Sealy, B.J., Collart, E.J.H., Armour, D.G., Gwilliam, R.

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Characterisation of an indirectly heated cathode source using Langmuir probe diagnostics von Mefo, J., Sealy, B.J., Collart, E.J.H., Armour, D.G., Gwilliam, R.

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Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si von van den Berg, J.A, Zhang, S, Whelan, S, Armour, D.G, Goldberg, R.D, Bailey, P, Noakes, T.C.Q

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The interaction of low energy ion beams with surfaces von Carter, G., Armour, D.G.

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Mass and energy analysis of the ions in a plasma flood system von Wooding, A.C., Armour, D.G., van den Berg, J.A., Holmes, A.J.T., Burgess, C., Goldberg, R.D.

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Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters von Fiala, J, Armour, D G, van den Berg, J A, Holmes, A J T, Goldberg, R D, Collart, E H J

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Study of residual damage in Si(001) due to low energy (110 eV) Ar + and Cl + bombardment using medium energy ion scattering von Al-Bayati, Amir H., Orrman-Rossiter, Kevin G., Armour, D.G.

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A hunting alphabet, an A B C G.D. Armour von Armour, G. D. 1864-1949

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