GaAs/AlGaAs quantum-well intermixing using shallow ion implantation and rapid thermal annealing von ELMAN, B, KOTELES, E. S, MELMAN, P, ARMIENTO, C. A

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Capless rapid thermal annealing of GaAs using an enhanced overpressure proximity technique von ARMIENTO, C. A, PRINCE, F. C

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Effect of heat treatment on InGaAs/GaAs quantum wells von ELMAN, B, KOTELES, E. S, MELMAN, P, JAGANNATH, C, ARMIENTO, CA. A, ROTHMAN, M

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Thermally stable, superlattice-enhanced 1.3- mu m InGaAs IMSM photodetectors on GaAs substrates von Choudhury, A.N.M.M., Jagannath, C., Negri, A., Elman, B., Armiento, C.A.

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Impact ionization in (100), (110), and (111) oriented InP avalanche photodiodes von Armiento, C. A., Groves, S. H.

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Improved activation of Mg+ and As+ dual implants in GaAs by capless rapid thermal annealing von MASUM CHOUDHURY, A. N. M, ARMIENTO, C. A

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Formation of p-type GaAs layers using Mg+ implantation and capless rapid thermal annealing von MASUM CHOUDHURY, A. N. M, ARMIENTO, C. A

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Monolithically integrated laser/rear-facet monitor arrays with V-groove for passive optical fiber alignment von Rothman, M.A., Shieh, C.L., Negri, A.J., Thompson, J.A., Armiento, C.A., Holmstrom, R.P., Kaur, J.

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Ionization coefficients of electrons and holes in InP von Armiento, C. A., Groves, S. H., Hurwitz, C. E.

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Capless rapid thermal annealing of Si+-implanted InP von WOODHOUSE, J. D, GAIDIS, M. C, DONNELLY, J. P, ARMIENTO, C. A

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Evidence for asymmetric well shapes in post-growth modified GaAs/AlGaAs quantum wells von KOTELES, E. S, ELMAN, B, ARMIENTO, C. A, MELMAN, P, CHI, J. Y, HOLMSTROM, R. J, POWERS, J, OWENS, D, CHARBONNEAU, S, THEWALT, M. L. W

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Capless rapid thermal annealing of GaAs implanted with Si+ using an enhanced overpressure proximity method von ARMIENTO, C. A, LEHMAN, L. L, PRINCE, F. C, ZEMON, S

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Application of a solution proximity annealing technique for fabrication of ion-implanted GaAs integrated circuits von Prince, F.C., Armiento, C.A.

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Effect of electric fields on excitons in a coupled double-quantum-well structure von CHEN, Y. J, KOTELES, E. S, ELMAN, B. S, ARMIENTO, C. A

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Diffusion length of moles in n-InP von DIADIUK, V, GROVES, S. H, ARMIENTO, C. A, HURWITZ, C. E

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Surface passivation techniques for InP and InGaAsP p-n junction structures von Diadiuk, V., Armiento, C.A., Groves, S.H., Hurwitz, C.E.

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A slow selective etch for GaInAsP grown on InP von FERRANTE, G. A, DONNELLY, J. P, ARMIENTO, C. A

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Thermally induced quantum well shape modification in strained heterostructures von Koteles, Emil S., Elman, B., Armiento, C.A., Melman, P.

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Quantum well shape modification using vacancy generation and rapid thermal annealing von Koteles, Emil S., Elman, B., Melman, P., Chi, J. Y., Armiento, C. A.

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Partial intermixing of strained InGaAs/GaAs quantum wells von Melman, P., Koteles, E. S., Elman, B., Armiento, C. A.

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