Improvement of Interpoly Dielectric Characteristics by Plasma Nitridation and Oxidation for Future nand Flash Memory von Ching Yuan Ho, Chenhsin Lien, Sakamoto, Y., Ru Jye Yang, Fijita, H., Liu, C.H., Lin, Y.M., Pittikoun, S., Aritome, S.

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Stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics von Satoh, S., Hemink, G., Hatakeyama, K., Aritome, S.

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Reliability issues of flash memory cells von Aritome, S., Shirota, R., Hemink, G., Endoh, T., Masuoka, F.

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A compact on-chip ECC for low cost flash memories von Tanzawa, T., Tanaka, T., Takeuchi, K., Shirota, R., Aritome, S., Watanabe, H., Hemink, G., Shimizu, K., Sato, S., Takeuchi, Y., Ohuchi, K.

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Advanced DC-SF Cell Technology for 3-D NAND Flash von Aritome, S., Yoohyun Noh, Hyunseung Yoo, Eun Seok Choi, Han Soo Joo, Youngsoo Ahn, Byeongil Han, Sungjae Chung, Keonsoo Shim, Keunwoo Lee, Sanghyon Kwak, Sungchul Shin, Iksoo Choi, Sanghyuk Nam, Gyuseog Cho, Dongsun Sheen, Seungho Pyi, Jongmoo Choi, Sungkye Park, Jinwoong Kim, Seokkiu Lee, Sungjoo Hong, Sungwook Park, Kikkawa, T.

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Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in \hboxX\hboxX\hbox\hbox Self-Aligned STI nand Flash Memory von Aritome, S., Soonok Seo, Hyung-Seok Kim, Sung-Kye Park, Seok-Kiu Lee, Sungjoo Hong

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A side-wall transfer-transistor cell (SWATT cell) for highly reliable multi-level NAND EEPROMs von Aritome, S., Takeuchi, Y., Sato, S., Watanabe, I., Shimizu, K., Hemink, G., Shirota, R.

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Advanced flash memory technology and trends for file storage application von Aritome, S.

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A New Metal Control Gate Last process (MCGL process) for high performance DC-SF (Dual Control gate with Surrounding Floating gate) 3D NAND flash memory von Yoohyun Noh, Youngsoo Ahn, Hyunseung Yoo, Byeongil Han, Sungjae Chung, Keonsoo Shim, Keunwoo Lee, Sanghyon Kwak, Sungchul Shin, Iksoo Choi, Sanghyuk Nam, Gyuseog Cho, Dongsun Sheen, Seungho Pyi, Jongmoo Choi, Sungkye Park, Jinwoong Kim, Seokkiu Lee, Aritome, S., Sungjoo Hong, Sungwook Park

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Highly reliable 26nm 64Gb MLC E2NAND (Embedded-ECC & Enhanced-efficiency) flash memory with MSP (Memory Signal Processing) controller von Hyunyoung Shim, Seaung-Suk Lee, Byungkook Kim, Namjae Lee, Doyoung Kim, Hankyum Kim, Byungkeun Ahn, Youngho Hwang, Hoseok Lee, Jumsoo Kim, Youngbok Lee, Heeyoul Lee, Juyeab Lee, Seungho Chang, Joongseob Yang, Sungkye Park, Aritome, S., Seokkiu Lee, Kun-Ok Ahn, Gihyun Bae, Yeseok Yang

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Improvement of Interpoly Dielectric Characteristics by Plasma Nitridation and Oxidation for Future @@inand@ Flash Memory von Ho, Ching Yuan, Lien, Chenhsin, Sakamoto, Y, Yang, Ru Jye, Fijita, H, Liu, C H, Lin, Y M, Pittikoun, S, Aritome, S

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BiCMOS circuit technology for high-speed DRAMs von Watanabe, S., Sakui, K., Fuse, T., Hara, T., Aritome, S., Hieda, K.

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An experimental 4-Mbit CMOS EEPROM with a NAND-structured cell von Momodomi, M., Itoh, Y., Shirota, R., Iwata, Y., Nakayama, R., Kirisawa, R., Tanaka, T., Aritome, S., Endoh, T., Ohuchi, K., Masuoka, F.

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Low-temperature nitridation of fluorinated silicon dioxide films in ammonia gas von ARITOME, S, MORITA, M, TANAKA, T, HIROSE, M

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A high-density NAND EEPROM with block-page programming for microcomputer applications von Iwata, Y., Momodomi, M., Tanaka, T., Oodaira, H., Itoh, Y., Nakayama, R., Kirisawa, R., Aritome, S., Endoh, T., Shirota, R., Ohuchi, K., Masuoka, F.

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A highly manufacturable integration technology of 20nm generation 64Gb multi-level NAND flash memory von Keun Woo Lee, Se Kyoung Choi, Sung Jae Chung, Hye Lyoung Lee, Su Min Yi, Byeong Il Han, Byung In Lee, Dong Hwan Lee, Ji Hyun Seo, Noh Yong Park, Hae Soo Kim, Hyung Seok Kim, Tae Un Youn, Keum Hwan Noh, Min Kyu Lee, Ju Yeab Lee, Kwang Hee Han, Won Sic Woo, Seok Won Cho, Seung Cheol Lee, Sung Soon Kim, Chan Sun Hyun, Weon Joon Suh, Sang Deok Kim, Myung Kyu Ahn, Hyeon Soo Kim, Ki Seog Kim, Gyu Seog Cho, Sung Kye Park, Aritome, S., Jin Woong Kim, Seok Kiu Lee, Sung Joo Hong, Sung Wook Park

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Acceleration of positive muons by a radio-frequency cavity von Aritome, S, Futatsukawa, K, Hara, H, Hayasaka, K, Ibaraki, Y, Ichikawa, T, Iijima, T, Iinuma, H, Ikedo, Y, Imai, Y, Inami, K, Ishida, K, Kamal, S, Kamioka, S, Kawamura, N, Kimura, M, Koda, A, Koji, S, Kojima, K, Kondo, A, Kondo, Y, Kuzuba, M, Matsushita, R, Mibe, T, Miyamoto, Y, Nakamura, J. G, Nakazawa, Y, Ogawa, S, Okazaki, Y, Otani, M, Oyama, S, Saito, N, Sato, H, Sato, T, Sato, Y, Shimomura, K, Shioya, Z, Strasser, P, Sugiyama, S, Sumi, K, Suzuki, K, Takeuchi, Y, Tanida, M, Tojo, J, Ueda, K, Uetake, S, Xie, X. H, Yamada, M, Yamamoto, S, Yamazaki, T, Yamura, K, Yoshida, M, Yoshioka, T, Yotsuzuka, M

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Low-temperature SiO2 growth using fluorine-enhanced thermal oxidation von MORITA, M, ARITOME, S, TSUKUDE, M, MURAKAWA, T, HIROSE, M

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Fluorine-enhanced photo-oxidation of silicon under ArF excimer laser irradiation in an O2 + NF3 gas mixture von MORITA, M, ARITOME, S, TANAKA, T, HIROSE, M

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A novel Multi - Nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND Flash memory von Liu, C. H., Lin, Y. M., Sakamoto, Y., Yang, R. J., Yin, D. Y., Chiang, P. J., Wei, H. C., Ho, C. Y., Chen, S. H., Hwang, H. P., Hung, C. H., Pittikoun, S., Aritome, S.

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