High voltage microsecond pulse generators with highly effective energy recuperation in cases of sharp changes in load impedance von Korotkov, S. V., Aristov, Y. V., Korotkov, D. A.

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The electronic structure of cobalt phthalocyanine von Maslyuk, V. V., Aristov, V. Y., Molodtsova, O. V., Vyalikh, D. V., Zhilin, V. M., Ossipyan, Y. A., Bredow, T., Mertig, I., Knupfer, M.

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High-power semiconductor-based nano and subnanosecond pulse Generator with a low delay time von Grekhov, I.V., Korotkov, S.V., Stepaniants, A.L., Khristyuk, D.V., Voronkov, V.B., Aristov, Y.V.

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Comment on “Adsorption of hydrogen and hydrocarbon molecules on SiC(001)” by Pollmann et al. (Surf. Sci. Rep. 69 (2014) 55–104) von Wimmer, E., Celasco, E., Vattuone, L., Savio, L., Tejeda, A., Silly, M., D'angelo, M., Sirotti, F., Rocca, M., Catellani, A., Galli, G., Douillard, L., Semond, F., Aristov, V.Yu, Soukiassian, P.

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Electron accumulation layer on clean In-terminated InAs(0 0 1)(4×2)-c(8×2) surface von De Padova, P., Quaresima, C., Perfetti, P., Larciprete, R., Brochier, R., Richter, C., Ilakovac, V., Bencok, P., Teodorescu, C., Aristov, V.Y., Johnson, R.L., Hricovini, K.

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Pulse Power Nanosecond-Range DSRD-Based Generators for Electric Discharge Technologies von Lyublinsky, Alexander G., Korotkov, Sergey V., Aristov, Yuri V., Korotkov, Dmitry A.

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H-induced Si-rich 3C-SiC(100) 3x2 surface metallization von D'angelo, M, Enriquez, H, Silly, M G, Derycke, V, Aristov, V Y, Soukiassian, P, Ottavianni, C, Pedio, M, Perfetti, P

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Microsecond Range RSD-Based Generators for Pulse Power Technologies von Korotkov, Sergey V., Lyublinsky, Alexander G., Aristov, Yuri V., Zhmodikov, Alexander L., Kozlov, Alexander K.

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Electronic properties of potassium-doped CuPc von Molodtsova, O. V., Zhilin, V. M., Vyalikh, D. V., Aristov, V. Yu, Knupfer, M.

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The Ag/n-InSb(110) interface at 10 K : first observation of an anomalous Fermi-level pinning von ARISTOV, V. Y, BERTOLO, M, ALTHAINZ, P, JACOBI, K

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Electron Spectroscopy Study of Noble Metal (Au, Cu, Ag)-InAs(110) Interfaces at 10-300 K von Aristov, V Yu

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β-SiC(100) surface: atomic structures and electronic properties von Aristov, V Yu

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Experimental and theoretical electronic structure determination of the β − SiC ( 001 ) c ( 4 × 2 ) surface reconstruction von Aristov, V. Yu, Soukiassian, P., Catellani, A., Di Felice, R., Galli, G.

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The electronic structure of cobalt phthalocyanine : Material Sciences at BESSY von MASLYUK, V. V, ARISTOV, V. Y, MOLODTSOVA, O. V, VYALIKH, D. V, ZHILIN, V. M, OSSIPYAN, Y. A, BREDOW, T, MERTIG, I, KNUPFER, M

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Electronic properties of cleaved (110) and MBE-grown (100) InAs surfaces, clean and covered with an ultra-thin Ag adlayer von Le Lay, G., Aristov, V.Yu, Kanski, J., Nilsson, P.O., Karlsson, U.O., Hricovini, K., Bonnet, J.E.

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High-resolution synchrotron radiation core-level spectroscopy of semiconductor surfaces von Le Lay, Guy, Aristov, Victor Yu, Fontaine, Marielle

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Possible derelaxation of p-type InP(110) von ARISTOV, V. Y, BOLOTIN, I. L, PARSONS, D

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Pairs of Si atomic lines self-assembling on the β-SiC(100) surface : an 8 x 2 reconstruction von DOUILLARD, L, ARISTOV, V. Yu, SEMOND, F, SOUKIASSIAN, P

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Ag Growth on 3C-SiC(001) c(2x2) C-Terminated and c(4x2) Si-Terminated Surfaces von Rodriguez, N., Aristov, V.Yu, Pedio, M., Crotti, C., Perfetti, P., Soukiassian, P., Lescuras, A., D'Angelo, M.

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Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface von Aristov, V. Yu, Le Lay, G., Zhilin, V. M., Indlekofer, G., Grupp, C., Taleb-Ibrahimi, A., Soukiassian, P.

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