Self-heating of cryogenic high electron-mobility transistor amplifiers and the limits of microwave noise performance von Ardizzi, Anthony J., Choi, Alexander Y., Gabritchidze, Bekari, Kooi, Jacob, Cleary, Kieran A., Readhead, Anthony C., Minnich, Austin J.

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Atomic layer etching of SiO2 using sequential exposures of Al(CH3)3 and H2/SF6 plasma von Catherall, David S., Hossain, Azmain A., Ardizzi, Anthony J., Minnich, Austin J.

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Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H2 and SF6/Ar plasmas von Chen, Ivy I., Solgaard, Jennifer, Sekine, Ryoto, Hossain, Azmain A., Ardizzi, Anthony, Catherall, David S., Marandi, Alireza, Renzas, James R., Greer, Frank, Minnich, Austin J.

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Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H$_2$ and SF$_6$ plasmas von Chen, Ivy I, Solgaard, Jennifer, Sekine, Ryoto, Hossain, Azmain A, Ardizzi, Anthony, Catherall, David S, Marandi, Alireza, Renzas, James R, Greer, Frank, Minnich, Austin J

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Self-heating of cryogenic high-electron-mobility transistor amplifiers and the limits of microwave noise performance von Ardizzi, Anthony J, Choi, Alexander Y, Gabritchidze, Bekari, Kooi, Jacob, Cleary, Kieran A, Readhead, Anthony C, Minnich, Austin J

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Directional atomic layer etching of MgO-doped lithium niobate using sequential exposures of H\(_2\) and SF\(_6\) plasma von Chen, Ivy I, Solgaard, Jennifer, Sekine, Ryoto, Hossain, Azmain A, Ardizzi, Anthony, Catherall, David S, Marandi, Alireza, Renzas, James R, Greer, Frank, Minnich, Austin J

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