Temperature dependence of the electron quantum lifetime in InGaAs/GaAs double quantum well: Fukuyama-Abrahams mechanism von Gudina, S.V., Arapov, Yu.G., Neverov, V.N., Savelyev, A.P., Sandakov, N.S., Shelushinina, N.G., Yakunin, M.V.

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Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells von Gudina, S.V., Arapov, Yu.G., Neverov, V.N., Savelyev, A.P., Podgornykh, S.M., Shelushinina, N.G., Yakunin, M.V.

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The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination von Arapov, Yu. G., Gudina, S. V., Klepikova, A. S., Neverov, V. N., Harus, G. I., Shelushinina, N. G., Yakunin, M. V.

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Effect of impurity potential range on a scaling behavior in the quantum Hall regime von Arapov, Yu.G., Harus, G.I., Karskanov, I.V., Neverov, V.N., Shelushinina, N.G., Yakunin, M.V.

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Parallel magnetic field-induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes von Yakunin, M.V., Alshanskii, G.A., Arapov, Yu.G., Harus, G.I., Neverov, V.N., Shelushinina, N.G., Kuznetsov, O.A., Zvonkov, B.N., Uskova, E.A., Ponomarenko, L., deVisser, A.

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Formation of Carbon Nanostructures in Electrolytic Production of Alkali Metals von Alekseev, N. I., Arapov, O. V., Belozerov, I. M., Osipov, Yu. G., Semenov, K. N., Polovtsev, S. V., Charykov, N. A., Izotova, S. G.

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