Formation of conductive AlN buffer layer using spontaneous via-holes and realization of vertical AlGaN Schottky diode on a Si substrate von Kurose, Noriko, Aoyagi, Yoshinobu

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Charge injection process in organic field-effect transistors von Minari, Takeo, Miyadera, Tetsuhiko, Tsukagoshi, Kazuhito, Aoyagi, Yoshinobu, Ito, Hiromi

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Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors von Nanjo, Takuma, Takeuchi, Misaichi, Suita, Muneyoshi, Oishi, Toshiyuki, Abe, Yuji, Tokuda, Yasunori, Aoyagi, Yoshinobu

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High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition von Aoyagi, Yoshinobu, Takeuchi, Misaichi, Iwai, Sohachi, Hirayama, Hideki

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Modification of the electric conduction at the pentacene∕SiO2 interface by surface termination of SiO2 von Yagi, Iwao, Tsukagoshi, Kazuhito, Aoyagi, Yoshinobu

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Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors von Minari, Takeo, Kano, Masataka, Miyadera, Tetsuhiko, Wang, Sui-Dong, Aoyagi, Yoshinobu, Tsukagoshi, Kazuhito

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Inactivation of Bacterial Viruses in Water Using Deep Ultraviolet Semiconductor Light-Emitting Diode von Aoyagi, Yoshinobu, Takeuchi, Misaichi, Yoshida, Kaoru, Kurouchi, Masahito, Yasui, Nobuhito, Kamiko, Naoyuki, Araki, Tutomu, Nanishi, Yasushi

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Hall Effect of Quasi-Hole Gas in Organic Single-Crystal Transistors von Takeya, Jun, Tsukagoshi, Kazuhito, Aoyagi, Yoshinobu, Takenobu, Taishi, Iwasa, Yoshihiro

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High-performance transparent flexible transistors using carbon nanotube films von Takenobu, Taishi, Takahashi, Tetsuo, Kanbara, Takayoshi, Tsukagoshi, Kazuhito, Aoyagi, Yoshinobu, Iwasa, Yoshihiro

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Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices von Kurose, Noriko, Matsumoto, Kota, Yamada, Fumihiko, Roffi, Teuku Muhammad, Kamiya, Itaru, Iwata, Naotaka, Aoyagi, Yoshinobu

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Microassembly of semiconductor three-dimensional photonic crystals von Aoki, Kanna, Miyazaki, Hideki T, Hirayama, Hideki, Inoshita, Kyoji, Baba, Toshihiko, Sakoda, Kazuaki, Shinya, Norio, Aoyagi, Yoshinobu

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Selective organization of solution-processed organic field-effect transistors von Minari, Takeo, Kano, Masataka, Miyadera, Tetsuhiko, Wang, Sui-Dong, Aoyagi, Yoshinobu, Seto, Mari, Nemoto, Takashi, Isoda, Seiji, Tsukagoshi, Kazuhito

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Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method von Yagi, Iwao, Tsukagoshi, Kazuhito, Aoyagi, Yoshinobu

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Development of High Power, Large Area, Deep Ultraviolet Light Emitting Devices Using Dynamic Microplasma Excitation (MIPE) of AlGaN Multiple Quantum Wells von KUROSE, NORIKO, AOYAGI, YOSHINOBU

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First Operation of AlGaN Channel High Electron Mobility Transistors von Nanjo, Takuma, Takeuchi, Misaichi, Suita, Muneyoshi, Abe, Yuji, Oishi, Toshiyuki, Tokuda, Yasunori, Aoyagi, Yoshinobu

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A rigid C3v-symmetrical host for saccharide recognition: 1,3,5-tris(2-hydroxyaryl)-2,4,6-trimethylbenzenes von Abe, Hajime, Aoyagi, Yoshinobu, Inouye, Masahiko

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Molecular-packing-enhanced charge transport in organic field-effect transistors based on semiconducting porphyrin crystals von Minari, Takeo, Seto, Mari, Nemoto, Takashi, Isoda, Seiji, Tsukagoshi, Kazuhito, Aoyagi, Yoshinobu

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AlN/AlGaN short-period superlattice sacrificial layers in laser lift-off for vertical-type AlGaN-based deep ultraviolet light emitting diodes von Takeuchi, Misaichi, Maegawa, Tomohiro, Shimizu, Hiroshi, Ooishi, Shin, Ohtsuka, Takumi, Aoyagi, Yoshinobu

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Inter-Layer Screening Length to Electric Field in Thin Graphite Film von Miyazaki, Hisao, Odaka, Shunsuke, Sato, Takashi, Tanaka, Sho, Goto, Hidenori, Kanda, Akinobu, Tsukagoshi, Kazuhito, Ootuka, Youiti, Aoyagi, Yoshinobu

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Local structure analysis of an optically active center in Er-doped ZnO thin film von Ishii, Masashi, Komuro, Shuji, Morikawa, Takitaro, Aoyagi, Yoshinobu

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