Effects of Ba-to-Si deposition rate ratios on the electrical and photoresponse properties of arsenic-doped n-type BaSi2 films von Aonuki, Sho, Yamashita, Yudai, Toko, Kaoru, Suemasu, Takashi

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High-temperature post-annealing effect on the surface morphology and photoresponse and electrical properties of B-doped BaSi2 films grown by molecular beam epitaxy under various Ba... von Narita, Shunsuke, Yamashita, Yudai, Aonuki, Sho, Saitoh, Noriyuki, Toko, Kaoru, Suemasu, Takashi

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Device operation of P‐ion‐implanted n‐BaSi2/p‐Si heterojunction solar cells von Aonuki, Sho, Yamashita, Yudai, Limodio, Gianluca, Narita, Shunsuke, Takayanagi, Kaori, Iwai, Ai, Toko, Kaoru, Zeman, Miro, Olindo Isabella, Suemasu, Takashi

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Effect of post-annealing on the significant photoresponsivity enhancement of BaSi2 epitaxial films on Si(111) von Haku, Yurika, Aonuki, Sho, Yamashita, Yudai, Toko, Kaoru, Suemasu, Takashi

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Demonstration of B-ion-implanted p-BaSi2/n-Si heterojunction solar cells von Aonuki, Sho, Narita, Shunsuke, Takayanagi, Kaori, Iwai, Ai, Yamashita, Yudai, Toko, Kaoru, Suemasu, Takashi

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Solar cell operation of sputter-deposited n-BaSi2/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy von Nemoto, Taira, Aonuki, Sho, Koitabashi, Ryota, Yamashita, Yudai, Mesuda, Masami, Toko, Kaoru, Suemasu, Takashi

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High-temperature post-annealing effect on the device performance of B-doped p-type BaSi2/n-Si heterojunction solar cells grown by molecular beam epitaxy von Narita, Shunsuke, Aonuki, Sho, Yamashita, Yudai, Takayanagi, Kaori, Toko, Kaoru, Suemasu, Takashi

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Mechanisms of carrier lifetime enhancement and conductivity-type switching on hydrogen-incorporated arsenic-doped BaSi2 von Aonuki, Sho, Xu, Zhihao, Yamashita, Yudai, Gotoh, Kazuhiro, Toko, Kaoru, Usami, Noritaka, Filonov, Andrew B., Nikitsiuk, Siarhei A., Migas, Dmitri B., Shohonov, Denis A., Suemasu, Takashi

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Effect of template on the photoresponsivity of BaSi2 films grown on Ge(111) substrates by molecular beam epitaxy von Aonuki, Sho, Takayanagi, Kaori, Iwai, Ai, Toko, Kaoru, Suemasu, Takashi

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Effects of hydrogen on trap neutralization in BaSi2 with interstitial silicon atoms von Aonuki, Sho, Toko, Kaoru, Filonov, Andrew B., Migas, Dmitri B., Suemasu, Takashi

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Effect of high-temperature postannealing atmosphere on the properties of BaSi2 films von Iwai, Ai, Aonuki, Sho, Narita, Shunsuke, Takayanagi, Kaori, Toko, Kaoru, Suemasu, Takashi

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Device operation of P‐ion‐implanted n‐BaSi 2 /p‐Si heterojunction solar cells von Aonuki, Sho, Yamashita, Yudai, Limodio, Gianluca, Narita, Shunsuke, Takayanagi, Kaori, Iwai, Ai, Toko, Kaoru, Zeman, Miro, Isabella, Olindo, Suemasu, Takashi

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Mechanism of photoresponsivity reduction in BaSi 2 epitaxial films by post-annealing at moderate temperatures von Aonuki, Sho, Haku, Yurika, Narita, Shunsuke, Takayanagi, Kaori, Iwai, Ai, Toko, Kaoru, Suemasu, Takashi

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Mechanism of photoresponsivity reduction in BaSi2 epitaxial films by post-annealing at moderate temperatures von Aonuki, Sho, Haku, Yurika, Narita, Shunsuke, Takayanagi, Kaori, Iwai, Ai, Toko, Kaoru, Suemasu, Takashi

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Effect of post-annealing on the significant photoresponsivity enhancement of BaSi 2 epitaxial films on Si(111) von Haku, Yurika, Aonuki, Sho, Yamashita, Yudai, Toko, Kaoru, Suemasu, Takashi

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Structural design of BaSi2 solar cells with a-SiC electron-selective transport layers von Du, Rui, Aonuki, Sho, Hasebe, Hayato, Kido, Kazuki, Takenaka, Haruki, Toko, Kaoru, Mesuda, Masami, Suemasu, Takashi

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Demonstration of B-ion-implanted p-BaSi 2 /n-Si heterojunction solar cells von Aonuki, Sho, Narita, Shunsuke, Takayanagi, Kaori, Iwai, Ai, Yamashita, Yudai, Toko, Kaoru, Suemasu, Takashi

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High-temperature post-annealing effect on the device performance of B-doped p-type BaSi 2 /n-Si heterojunction solar cells grown by molecular beam epitaxy von Narita, Shunsuke, Aonuki, Sho, Yamashita, Yudai, Takayanagi, Kaori, Toko, Kaoru, Suemasu, Takashi

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Structural design of BaSi 2 solar cells with a-SiC electron-selective transport layers von Du, Rui, Aonuki, Sho, Hasebe, Hayato, Kido, Kazuki, Takenaka, Haruki, Toko, Kaoru, Mesuda, Masami, Suemasu, Takashi

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Fabrication of As-doped n-type BaSi 2 epitaxial films grown by molecular beam epitaxy von Aonuki, Sho, Yamashita, Yudai, Toko, Kaoru, Suemasu, Takashi

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