High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs von Yonebayashi, Ryo, Tanaka, Kohei, Okada, Kuniaki, Yamamoto, Kaoru, Yamamoto, Keiichi, Uchida, Seiichi, Aoki, Tomohisa, Takeda, Yujiro, Furukawa, Hiroaki, Ito, Kazuatsu, Katoh, Hiromi, Nakamura, Wataru

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Au-induced lateral crystallization of a-Si1−Ge (x: 0–1) at low temperature von Aoki, Tomohisa, Kanno, Hiroshi, Kenjo, Atsushi, Sadoh, Taizoh, Miyao, Masanobu

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400 °C Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization von Kanno, Hiroshi, Aoki, Tomohisa, Kenjo, Atsushi, Sadoh, Taizoh, Miyao, Masanobu

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24‐4: Distinguished Paper: High Refresh Rate and Low Power Consumption AMOLED Panel Using Top‐gate n‐Oxide and p‐LTPS TFTs von Yonebayashi, Ryo, Tanaka, Kohei, Okada, Kuniaki, Yamamoto, Kaoru, Yamamoto, Keiichi, Uchida, Seiichi, Aoki, Tomohisa, Takeda, Yujiro, Furukawa, Hiroaki, Ito, Kazuatsu, Katoh, Hiromi, Nakamura, Wataru

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Au-induced lateral crystallization of a-Si1-xGex (x: 0-1) at low temperature von AOKI, Tomohisa, KANNO, Hiroshi, KENJO, Atsushi, SADOH, Taizoh, MIYAO, Masanobu

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Au-induced lateral crystallization of a-Si 1− x Ge x ( x: 0–1) at low temperature von Aoki, Tomohisa, Kanno, Hiroshi, Kenjo, Atsushi, Sadoh, Taizoh, Miyao, Masanobu

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Array substrate, display device, and method of producing array substrate von Yamada, Miho, Itoh, Tsuyoshi, Aoki, Tomohisa, Sakata, Tohru, Kumagai, Kohichi

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Display device having a first transistor including a crystalline silicon semiconductor layer and a second transistor including an oxide semiconductor layer von Saitoh, Yuhichi, Aoki, Tomohisa, Furukawa, Hiroaki, Hachiya, Atsushi

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DISPLAY DEVICE von HACHIYA, Atsushi, AOKI, Tomohisa, SAITOH, Yuhichi, FURUKAWA, HIROAKI

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Display device von Saitoh, Yuhichi, Aoki, Tomohisa, Furukawa, Hiroaki, Hachiya, Atsushi

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Display device von Saitoh, Yuhichi, Aoki, Tomohisa, Hachiya, Atsushi, Furukawa, Hiroaki

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DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE von AOKI, Tomohisa, SAITOH, Yuhichi, FURUKAWA, HIROAKI, HACHIYA, ATSUSHI

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ARRAY SUBSTRATE, DISPLAY DEVICE, AND METHOD OF PRODUCING ARRAY SUBSTRATE von ITOH, Tsuyoshi, AOKI, Tomohisa, KUMAGAI, Kohichi, YAMADA, Miho, SAKATA, Tohru

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Low-Temperature Formation of Poly-Si 1-x Ge x (x: 0–1) on SiO 2 by Au-Mediated Lateral Crystallization von Kanno, Hiroshi, Aoki, Tomohisa, Kenjo, Atsushi, Sadoh, Taizoh, Miyao, Masanobu

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DISPLAY DEVICE von AOKI, Tomohisa, SAITOH, Yuhichi, FURUKAWA, HIROAKI, HACHIYA, ATSUSHI

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DISPLAY DEVICE von AOKI, Tomohisa, SAITOH, Yuhichi, FURUKAWA, HIROAKI, HACHIYA, ATSUSHI

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DISPLAY DEVICE von AOKI, Tomohisa, SAITOH, Yuhichi, FURUKAWA, HIROAKI, HACHIYA, ATSUSHI

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400 °C Formation of poly-SiGe on SiO 2 by Au-induced lateral crystallization von Kanno, Hiroshi, Aoki, Tomohisa, Kenjo, Atsushi, Sadoh, Taizoh, Miyao, Masanobu

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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE von AOKI TOMOHISA

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Active matrix substrate and demultiplexer circuit von Saitoh, Yuhichi, Aoki, Tomohisa, Furukawa, Hiroaki, Hachiya, Atsushi

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