High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films von Adnane, L., Dirisaglik, F., Cywar, A., Cil, K., Zhu, Y., Lam, C., Anwar, A. F. M., Gokirmak, A., Silva, H.

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Bias induced strain in AlGaN∕GaN heterojunction field effect transistors and its implications von Anwar, A. F. M., Webster, Richard T., Smith, Kurt V.

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AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics von Faraclas, Elias W., Anwar, A.F.M.

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Self-heating and trapping effects on the RF performance of GaN MESFETs von Islam, S.S., Anwar, A.F.M.

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Schottky barrier height in GaN/AlGaN heterostructures von Anwar, A.F.M., Faraclas, Elias W.

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Carrier trapping and current collapse mechanism in GaN metal–semiconductor field-effect transistors von Anwar, A. F. M., Islam, Syed S., Webster, Richard T.

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A physics-based frequency dispersion model of GaN MESFETs von Islam, S.S., Anwar, A.F.M., Webster, R.T.

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Impact ionization in InAlAs/InGaAs/InAlAs HEMT's von Webster, R.T., Shangli Wu, Anwar, A.F.M.

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A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series von Ahmed, A., Islam, S.S., Anwar, A.F.M.

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Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models including trapping effects von Islam, S.S., Anwar, A.F.M.

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Noise in Metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs von Webster, Richard T., Anwar, A.F.M.

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Response to “Comment on ‘Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors’ ” [Appl. Phys. Lett. 86, 016101 (2005)] von Anwar, A. F. M., Islam, Syed S., Webster, Richard T.

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Frequency and temperature dependence of gain compression in GaN/AlGaN HEMT amplifiers von Ahmed, Arif, Islam, Syed S., Anwar, A.F.M.

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A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors von Anwar, A.F.M., Jahan, M.M.

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Growth parameter dependence of gain compression in AlGaN/GaN HFETs von Faraclas, Elias W., Islam, Syed S., Anwar, A.F.M.

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Bias dependence of high-frequency noise in heterojunction bipolar transistors von Jahan, M.M., Kuo-Wei Liu, Anwar, A.F.M.

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High frequency GaN/AlGaN HEMT class-E power amplifier von Islam, Syed S., Anwar, A.F.M.

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A self-consistent model for small-signal parameters and noise performance of InAlAs/InGaAs/InAlAs/InP HEMTs von Liu, Kuo-Wei, Anwar, A.F.M.

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Energy bandgap of AlxGa1−xAs1−ySby and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures von Anwar, A.F.M, Webster, RT

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Effects of impurity traps on gate current and trapped charge in MOSFETs von Islam, Syed S, Rezwan Khan, M, Anwar, A.F.M

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