High-speed graded-channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz von Moon, J.S, Grabar, R, Wong, J, Antcliffe, M, Chen, P, Arkun, E, Khalaf, I, Corrion, A, Chappell, J, Venkatesan, N, Fay, P

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Ultra-low resistance ohmic contacts in graphene field effect transistors von Moon, J. S., Antcliffe, M., Seo, H. C., Curtis, D., Lin, S., Schmitz, A., Milosavljevic, I., Kiselev, A. A., Ross, R. S., Gaskill, D. K., Campbell, P. M., Fitch, R. C., Lee, K.-M., Asbeck, P.

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Graphene FETs for Zero-Bias Linear Resistive FET Mixers von Moon, J. S., Seo, H.-C, Antcliffe, M., Le, D., McGuire, C., Schmitz, A., Nyakiti, L. O., Gaskill, D. K., Campbell, P. M., Lee, K.-M, Asbeck, P.

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High-speed FP GaN HEMT with fT/fMAX of 95/200 GHz von Moon, J.S, Grabar, R, Antcliffe, M, Fung, H, Tang, Y, Tai, H

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Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection von Moon, J. S., Seo, H-C, Antcliffe, M., Lin, S., McGuire, C., Le, D., Nyakiti, L. O., Gaskill, D. K., Campbell, P. M., Lee, K-M, Asbeck, P.

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Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications von Moon, J.S., Shihchang Wu, Wong, D., Milosavljevic, I., Conway, A., Hashimoto, P., Hu, M., Antcliffe, M., Micovic, M.

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55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via n+ GaN Source Contact Ledge von MOON, J. S, WONG, D, HU, M, HASHIMOTO, P, ANTCLIFFE, M, MCGUIRE, C, MICOVIC, M, WILLADSON, P

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GaN enhancement/depletion-mode FET logic for mixed signal applications von MICOVIC, M, TSEN, T, WONG, W. S, CHOW, D, HU, M, HASHIMOTO, P, WILLADSEN, P. J, MILOSAVLJEVIC, I, SCHMITZ, A, ANTCLIFFE, M, ZHENDER, D, MOON, J. S

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GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio von Micovic, M., Kurdoghlian, A., Moyer, H.P., Hashimoto, P., Hu, M., Antcliffe, M., Willadsen, P.J., Wong, W.S., Bowen, R., Milosavljevic, I., Yoon, Y., Schmitz, A., Wetzel, M., McGuire, C., Hughes, B., Chow, D.H.

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GaN MMICs for RF power applications in the 50 GHz to 110 GHz frequency range von Micovic, M., Kurdoghlian, A., Hashimoto, P., Hu, M., Antcliffe, M., Willadsen, P. J., Wong, W. S., Bowen, R., Milosavljevic, I., Yoon, Y., Schmitz, A., Wetzel, M., Chow, D. H.

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High‐speed FP GaN HEMT with f T /f MAX of 95/200 GHz von Moon, J.S., Grabar, R., Antcliffe, M., Fung, H., Tang, Y., Tai, H.

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Multidisciplinary antenatal care for opiate-using women: Child-care issues von ADENIJI, ADERONKE A., PURCELL, ALISON, PEARSON, LORRAINE, ANTCLIFFE, JAN M., TUTTY, SUSAN, SINHA, CHITRA, PAIRAUDEAU, PETER W., LINDOW, STEPHEN W.

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55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via \hbox+ GaN Source Contact Ledge von Moon, J.S., Wong, D., Hu, M., Hashimoto, P., Antcliffe, M., McGuire, C., Micovic, M., Willadson, P.

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55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via hbox n + GaN Source Contact Ledge von Moon, J S, Wong, D, Hu, M, Hashimoto, P, Antcliffe, M, McGuire, C, Micovic, M, Willadson, P

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55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via [Formula Omitted] GaN Source Contact Ledge von Moon, J.S, Wong, D, Hu, M, Hashimoto, P, Antcliffe, M, McGuire, C, Micovic, M, Willadson, P

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Robust Broadband (4 GHz - 16 GHz) GaN MMIC LNA von Micovic, M., Kurdoghlian, A., Lee, T., Hiramoto, R.O., Hashimoto, P., Schmitz, A., Milosavljevic, I., Willadsen, P.J., Wong, W.-S., Antcliffe, M., Wetzel, M., Hu, M., Delaney, M.J., Chow, D.H.

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GaN enhancement/depletion-mode FET logic for mixed signal applications von Micovic, M, Tsen, T, Hu, M, Hashimoto, P, Willadsen, P J, Milosavljevic, I, Schmitz, A, Antcliffe, M, Zhender, D, Moon, J S, Wong, W S, Chow, D

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Q-Band GaN MMIC LNA Using a 0.15μm T-Gate Process von Moyer, H.P., Kurdoghlian, A., Micovic, M., Lee, T., Hiramoto, R.O., Be Zaire, M.J., Nguyen, S., Hashimoto, P., Schmitz, A., Milosavljevic, I., Willadsen, P.J., Wong, W.-S., Antcliffe, M., Wetzel, M.D., Hu, M.

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Submicron enhancement-mode AlGaN/GaN HEMTs von Moon, J.S., Wong, D., Hussain, T., Micovic, M., Deelman, P., Ming Hu, Antcliffe, M., Ngo, C., Hashimoto, P., McCray, L.

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10 W/mm and High PAE Field-plated AlGaN/GaN HEMTs at Ka-band with n+GaN Source Contact Ledge von Moon, J.S., Hashimoto, P., Wong, D., Hu, M., Antcliffe, M., McGuire, C., Micovic, M., Willadsen, P., Chow, D.

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