Electroluminescence of evaporated ZnS and ZnSe films von Antcliffe, G A

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High-field electroluminescence in ZnS and ZnSe films von Antcliffe, G A

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Band Structure of Doped Bismuth Using the Shubnikov—de Haas Effect von Antcliffe, G. A., Bate, R. T.

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Antimony Diffusion Into p-Type Pb1-xSnxTe von Guldi, R L, Antcliffe, G A

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Nonohmic conductivity in Bi88Sb12 von Antcliffe, G.A.

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On the ferroelectric nature of the cubic-rhombohedral phase transition in Pb1−xGexTe von Antcliffe, G.A., Bate, R.T., Buss, D.D.

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Preparation and transport properties of epitaxial HgTe films von Antcliffe, G.A., Kraus, H.

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Characteristics of Large Area CCD Imaging Systems von Taylor, G. W., Collins, D. R., Hartsell, G. A., Antcliffe, G. A.

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Operation of CCD's with stationary and moving electron-beam input von Antcliffe, G.A., Roberts, C.G., Barton, J.B., Pharr, K.K., Mueller, D.W., Collins, D.R.

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A backside illuminated 400 x 400 charge-coupled device imager von Antcliffe, G A, Hornbeck, L J, Chan, W W, Walker, J W, Rhines, W C, Collins, D R

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Band structure of Bi88Sb12 von Antcliffe, G.A.

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Development of CCD imaging sensors for space applications, phase 1 von Antcliffe, G. A.

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Diffused junction photovoltaic infrared detectors using Pb1− x Ge x Te with 0.05⩽ x ⩽0.11 von Antcliffe, G. A., Chapman, R. A.

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Diffused Junction Photovoltaic Infrared Detectors Using Pb1-xGexTe With 0.05 Equal to or Less Than x Equal to or Less Than 0.11 von Antcliffe, G A, Chapman, R A

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Characteristics of tunable Pb/1-x/Sn/x/Te junction lasers in the 8-12-micron region (Tunable Pb-Sn-Te junction laser characteristics and fabrication by impurity diffusion for IR CW... von Antcliffe, G A, Parker, S G

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Characteristics of tunable Pb1− x Sn x Te junction lasers in the 8–12-μm region von Antcliffe, G. A., Parker, S. G.

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Antimony Diffusion into P-Type Pb[sub 1−x]Sn[sub x]Te von Guldi, R. L., Antcliffe, G. A.

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Detection of the Gaseous Pollutant Sulfur Dioxide Using Current Tunable Pb(1-x) SnM(x) Te Diode Lasers von Antcliffe, G A, Wrobel, J S

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SPONTANEOUS AND LASER EMISSION FROM Pb1− x Sn x Te DIODES PREPARED BY Sb DIFFUSION von Antcliffe, G. A., Wrobel, J. S.

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High mobility n-type Pb0.83Sn0.17 Te single crystals von Antcliffe, G.A., Wrobel, J.S.

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