Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses von Yuan, P., Hansing, C.C., Anselm, K.A., Lenox, C.V., Nie, H., Holmes, A.L., Streetman, B.G., Campbell, J.C.

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Performance of thin separate absorption, charge, and multiplication avalanche photodiodes von Anselm, K.A., Nie, H., Hu, C., Lenox, C., Yuan, P., Kinsey, G., Campbell, J.C., Streetman, B.G.

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Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product von Nie, H., Anselm, K.A., Lenox, C., Yuan, P., Hu, C., Kinsey, G., Streetman, B.G., Campbell, J.C.

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Individualised treatment targets in patients with type-2 diabetes and hypertension von Schmieder, Roland E, Tschöpe, Diethelm, Koch, Cornelia, Ouarrak, Taoufik, Gitt, Anselm K

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InAs/InGaSb photodetectors grown on GaAs bonded substrates von VILELA, M. F, ANSELM, K. A, SOORIAR, N, JOHNSON, J. L, LIN, C. H, BROWN, G. J, MAHALINGAM, K, SAXLER, A, SZMULOWICZ, F

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A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes von Yuan, P., Anselm, K.A., Hu, C., Nie, H., Lenox, C., Holmes, A.L., Streetman, B.G., Campbell, J.C., McIntyre, R.J.

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Excess noise in GaAs avalanche photodiodes with thin multiplication regions von Hu, C., Anselm, K.A., Streetman, B.G., Campbell, J.C.

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High-reflectivity Bragg mirrors for optoelectronic applications von Murtaza, S.S., Anselm, K.A., Srinivasan, A., Streetman, B.G., Campbell, J.C., Bean, J.C., Peticolas, L.

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Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions von Ma, F., Wang, S., Li, X., Anselm, K. A., Zheng, X. G., Holmes, A. L., Campbell, J. C.

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High-finesse resonant-cavity photodetectors with an adjustable resonance frequency von Murtaza, S.S., Tan, I.-H., Bowers, J.E., Hu, E.L., Anselm, K.A., Islam, M.R., Chelakara, R.V., Dupuis, R.D., Streetman, B.G., Campbell, J.C.

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Noise characteristics of thin multiplication region GaAs avalanche photodiodes von Hu, C., Anselm, K. A., Streetman, B. G., Campbell, J. C.

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Patients With Newly Diagnosed Hypertension Treated With the Renin Angiotensin Receptor Blocker Azilsartan Medoxomil vs Angiotensin‐Converting Enzyme Inhibitors: The Prospective EAR... von Schmieder, Roland E., Potthoff, Sebastian A., Bramlage, Peter, Baumgart, Peter, Mahfoud, Felix, Buhck, Hartmut, Ouarrak, Taoufik, Ehmen, Martina, Senges, Jochen, Gitt, Anselm K.

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A resonant-cavity, separate-absorption-and-multiplication, avalanche photodiode with low excess noise factor von Anselm, K.A., Murtaza, S.S., Hu, C., Nie, H., Streetman, B.G., Campbell, J.C.

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The renin-angiotensin receptor blocker azilsartan medoxomil compared with the angiotensin-converting enzyme inhibitor ramipril in clinical trials versus routine practice: insights... von Bramlage, Peter, Schmieder, Roland E, Gitt, Anselm K, Baumgart, Peter, Mahfoud, Felix, Buhck, Hartmut, Ouarrak, Taoufik, Ehmen, Martina, Potthoff, Sebastian A

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Resonant-cavity enhanced (RCE) separate absorption and multiplication (SAM) avalanche photodetector (APD) von Murtaza, S.S., Anselm, K.A., Hu, C., Nie, H., Streetman, B.G., Campbell, J.C.

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Achievement of recommended glucose and blood pressure targets in patients with type 2 diabetes and hypertension in clinical practice - study rationale and protocol of DIALOGUE von Gitt, Anselm K, Schmieder, Roland E, Duetting, Eva, Bramlage, Peter, Schneider, Steffen, Tschöpe, Diethelm

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High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths von Murtaza, S.S., Tan, I.-H., Chelakara, R.V., Islam, M.R., Srinivasan, A., Anselm, K.A., Bowers, J.E., Hu, E.L., Dupuis, R.D., Streetman, B.G., Campbell, J.C.

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EARLY Treatment with azilsartan compared to ACE-inhibitors in anti-hypertensive therapy--rationale and design of the EARLY hypertension registry von Gitt, Anselm K, Baumgart, Peter, Bramlage, Peter, Mahfoud, Felix, Potthoff, Sebastian A, Senges, Jochen, Schneider, Steffen, Buhck, Hartmut, Schmieder, Roland E

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High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product von Nie, Hui, Anselm, K. A., Hu, C., Murtaza, S. S., Streetman, B. G., Campbell, J. C.

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Characteristics of GaAs and AlGaAs homojunction avalanche photodiodes with thin multiplication regions von Anselm, K. A., Yuan, P., Hu, C., Lenox, C., Nie, H., Kinsey, G., Campbell, J. C., Streetman, B. G.

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