Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations von Barbisan, Luca, Marzegalli, Anna, Montalenti, Francesco

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Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals von Falub, Claudiu V., von Känel, Hans, Isa, Fabio, Bergamaschini, Roberto, Marzegalli, Anna, Chrastina, Daniel, Isella, Giovanni, Müller, Elisabeth, Niedermann, Philippe, Miglio, Leo

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The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach von Scalise, Emilio, Barbisan, Luca, Sarikov, Andrey, Montalenti, Francesco, Miglio, Leo, Marzegalli, Anna

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Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X‑ray Diffraction Microscopy von Zoellner, Marvin H, Richard, Marie-Ingrid, Chahine, Gilbert A, Zaumseil, Peter, Reich, Christian, Capellini, Giovanni, Montalenti, Francesco, Marzegalli, Anna, Xie, Ya-Hong, Schülli, Tobias U, Häberlen, Maik, Storck, Peter, Schroeder, Thomas

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Perfect crystals grown from imperfect interfaces von Falub, Claudiu V., Meduňa, Mojmír, Chrastina, Daniel, Isa, Fabio, Marzegalli, Anna, Kreiliger, Thomas, Taboada, Alfonso G., Isella, Giovanni, Miglio, Leo, Dommann, Alex, von Känel, Hans

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Evolution and Intersection of Extended Defects and Stacking Faults in 3C‐SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case von Barbisan, Luca, Scalise, Emilio, Marzegalli, Anna

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Impact of Inversion Domain Boundaries on the Electronic Properties of 3C‐SiC von Scalise, Emilio, Zimbone, Massimo, Marzegalli, Anna

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Evolution and Intersection of Extended Defects and Stacking Faults in 3C‐SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case von Barbisan, Luca, Scalise, Emilio, Marzegalli, Anna

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Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition von Ge, Guojia, Rovaris, Fabrizio, Lanzoni, Daniele, Barbisan, Luca, Tang, Xiaobin, Miglio, Leo, Marzegalli, Anna, Scalise, Emilio, Montalenti, Francesco

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Onset of vertical threading dislocations in Si1−xGex/Si (001) at a critical Ge concentration von Fabio Isa, Anna Marzegalli, Alfonso G. Taboada, Claudiu V. Falub, Giovanni Isella, Francesco Montalenti, Hans von Känel, Leo Miglio

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Author Correction: In-plane selective area InSb–Al nanowire quantum networks von Op het Veld, Roy L. M., Xu, Di, Schaller, Vanessa, Verheijen, Marcel A., Peters, Stan M. E., Jung, Jason, Tong, Chuyao, Wang, Qingzhen, de Moor, Michiel W. A., Hesselmann, Bart, Vermeulen, Kiefer, Bommer, Jouri D. S., Lee, Joon Sue, Sarikov, Andrey, Pendharkar, Mihir, Marzegalli, Anna, Koelling, Sebastian, Kouwenhoven, Leo P., Miglio, Leo, Palmstrøm, Chris J., Zhang, Hao, Bakkers, Erik P. A. M.

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Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries von Zimbone, Massimo, Sarikov, Andrey, Bongiorno, Corrado, Marzegalli, Anna, Scuderi, Viviana, Calabretta, Cristiano, Miglio, Leo, La Via, Francesco

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Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure von Marzegalli, Anna, Montalenti, Francesco, Scalise, Emilio

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Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations von Barbisan, Luca, Sarikov, Andrey, Marzegalli, Anna, Montalenti, Francesco, Miglio, Leo

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Temperature-Dependent Stability of Polytypes and Stacking Faults in Si C : Reconciling Theory and Experiments von Scalise, Emilio, Marzegalli, Anna, Montalenti, Francesco, Miglio, Leo

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Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon von Rovaris, Fabrizio, Marzegalli, Anna, Montalenti, Francesco, Scalise, Emilio

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Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations von Sarikov, Andrey, Marzegalli, Anna, Barbisan, Luca, Montalenti, Francesco, Miglio, Leo

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Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials von Sarikov, Andrey, Marzegalli, Anna, Barbisan, Luca, Scalise, Emilio, Montalenti, Francesco, Miglio, Leo

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New Approaches and Understandings in the Growth of Cubic Silicon Carbide von La Via, Francesco, Zimbone, Massimo, Bongiorno, Corrado, La Magna, Antonino, Fisicaro, Giuseppe, Deretzis, Ioannis, Scuderi, Viviana, Calabretta, Cristiano, Giannazzo, Filippo, Zielinski, Marcin, Anzalone, Ruggero, Mauceri, Marco, Crippa, Danilo, Scalise, Emilio, Marzegalli, Anna, Sarikov, Andrey, Miglio, Leo, Jokubavicius, Valdas, Syväjärvi, Mikael, Yakimova, Rositsa, Schuh, Philipp, Schöler, Michael, Kollmuss, Manuel, Wellmann, Peter

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Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations von Sarikov, Andrey, Marzegalli, Anna, Barbisan, Luca, Zimbone, Massimo, Bongiorno, Corrado, Mauceri, Marco, Crippa, Danilo, La Via, Francesco, Miglio, Leo

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