Addition of the lewis acid Zn(C6 F5 )2 enables organic transistors with a maximum hole mobility in excess of 20 cm2 V-1 s-1 von Paterson, AF, Tsetseris, L, Li, R, Basu, A, Faber, H, Emwas, A-H, Panidi, J, Fei, Z, Niazi, MR, Anjum, DH, Heeney, M, Anthopoulos, TD

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Enhanced photocatalytic hydrogen evolution from organic semiconductor heterojunction nanoparticles von Kosco, J, Bidwell, M, Cha, H, Martin, T, Howells, CT, Sachs, M, Anjum, DH, Gonzalez Lopez, S, Zou, L, Wadsworth, A, Zhang, W, Zhang, L, Tellam, J, Sougrat, R, Laquai, F, DeLongchamp, DM, Durrant, JR, McCulloch, I

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Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs von Guangrui Xia, Nayfeh, H.M., Lee, M.L., Fitzgerald, E.A., Antoniadis, D.A., Anjum, D.H., Jian Li, Hull, R., Klymko, N., Hoyt, J.L.

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Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers von Drake, T. S., Chléirigh, C. Nı́, Lee, M. L., Pitera, A. J., Fitzgerald, E. A., Antoniadis, D. A., Anjum, D. H., Li, J., Hull, R., Klymko, N., Hoyt, J. L.

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Fabrication of ultra-thin strained silicon on insulator von DRAKE, T. S, CHLEIRIGH, C. Ni, HOYT, J. L, LEE, M. L, PITERA, A. J, FITZGERALD, E. A, ANTONIADIS, D. A, ANJUM, D. H, LI, J, HULL, R, KLYMKO, N

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