Contribution of numerical simulation to silicon carbide bulk growth and epitaxy von Meziere, Jérôme, Pons, Michel, Cioccio, Léa Di, Blanquet, Elisabeth, Ferret, Pierre, Dedulle, Jean-Marc, Baillet, Francis, Pernot, Etienne, Anikin, Michaïl, Madar, Roland, Billon, Thierry

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Contribution of numerical simulation to silicon carbide bulk growth and epitaxy : Silicon carbide von MEZIERE, Jérome, PONS, Michel, BILLON, Thierry, DI CIOCCIO, Léa, BLANQUET, Elisabeth, FERRET, Pierre, DEDULLE, Jean-Marc, BAILLET, Francis, PERNOT, Etienne, ANIKIN, Michail, MADAR, Roland

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SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results von Anikin, Mikhail, Passero, Antoine, Pons, Michel, Pisch, Alexander, Grosse, Philippe, Basset, Alain, Billon, Thierry, Madar, Roland, Moulin, Cécile, Pernot, Etienne, Pelissier, Bernard, Pernot-Rejmánková, Petra, Faure, Christian, Basset, Gérard

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Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics von Anikin, Mikhail, Bernard, Claude, Pisch, Alexander, Chatillon, Christian, Pons, Michel, Madar, Roland, Ferraria, Ana Maria, Blanquet, Elisabeth

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Numerical Simulation of SiC Boule Growth by Sublimation von Anikin, Mikhail, Bernard, Claude, Pons, Michel, Pisch, Alexander, Grosse, Philippe, Madar, Roland, Faure, Christian, Dedulle, Jean Marc, Blanquet, Elisabeth

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Progress in 4H-SiC Bulk Growth von Anikin, Mikhail, Pelissier, Bernard, Bernard, Claude, Pons, Michel, Pisch, Alexander, Billon, Thierry, Madar, Roland, Faure, Christian, Moulin, Cécile, Pernot, Etienne

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