Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system von Anikin, M.M., Lebedev, A.A., Pyatko, S.N., Strel'chuk, A.M., Syrkin, A.L.

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UV photodetectors in 6HSiC von Anikin, M.M., Andreev, A.N., Pyatko, S.N., Savkina, N.S., Strelchuk, A.M., Syrkin, A.L., Chelnokov, V.E.

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Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres von Lebedev, Alexander A., Anikin, M.M., Strel'chuk, Anatoly M.

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High temperature silicon carbide stabilitrons for the voltage range from 4 to 50 V von Andreev, A.N., Anikin, M.M., Zelenin, V.V., Ivanov, P.A., Lebedev, A.A., Rastegaeva, M.G., Savkina, N.S., Strel'chuk, A.M., Syrkin, A.L., Chelnokov, V.E.

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Power silicon carbide devices based on Lely grown substrates von Lebedev, A.A., Andreev, A.N., Anikin, M.M., Rastegaeva, M.G., Savkina, N.S., Strelchuk, A.M., Syrkin, A.L., Tregubova, A.S., Chelnokov, V.E.

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METHOD OF MANUFACTURE OF DECORATIVE CONCRETE ARTICLES von ANIKIN V.A, SAFRONOV V.I, KLEJNFEL'D K.EH, FILATOV V.G, DEMIDOV A.L, LAM I.M, TURETSKOV S.A, ABRAMOVICH JU.A, KARGMAN M.M

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SET FOR DETECTION OF TUBERCULOSIS MYCOBACTERIA BY FLUORESCENCE METHOD von ANIKIN V.A, KAZANKOVA N.V, SAVVINA L.P, SLIVKA L.K, ULITINA N.M, ALEKSEEVA V.I, SELEZNEVA T.B, MARININA L.E, MALOSHENKO M.M, LUK'JANETS E.A, KALIJA O.L, KUZNETSOVA N.A

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