Nitrogen vacancy–acceptor complexes in gallium nitride von Vorobiov, Mykhailo, Demchenko, Denis O., Andrieiev, Oleksandr, Reshchikov, Michael A.

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Effect of Annealing on Photoluminescence from Defects in GaN von Andrieiev, Oleksandr

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Passivation of acceptors in GaN by hydrogen and their activation von Reshchikov, Michael A, Andrieiev, Oleksandr, Vorobiov, Mykhailo, Ye, Dexian, Demchenko, Denis O, McEwen, Benjamin, Shahedipour-Sandvik, Shadi

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Вплив форми крила на характеристики при використанні інтегрованої роторної силової установки літака... von Komarov, Bohdan, Zinchenko, Dmytro, Andrieiev, Oleksandr

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Influence of wing shape on characteristics of fan-wing aircraft power plant von Bohdan Komarov, Dmytro Zinchenko, Oleksandr Andrieiev

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Photoluminescence from GaN Implanted with Be and F von Reshchikov, Michael Alexander, Andrieiev, Oleksandr, Vorobiov, Mykhailo, Demchenko, Denis O., McEwen, Benjamin, Shahedipour-Sandvik, Shadi

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Point defects in beryllium-doped GaN von Vorobiov, Mykhailo, Andrieiev, Oleksandr, Demchenko, Denis O., Reshchikov, Michael A.

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Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition von Reshchikov, Michael Alexander, Vorobiov, Mykhailo, Andrieiev, Oleksandr, McEwen, Benjamin, Rocco, Emma, Meyers, Vincent, Demchenko, Denis O., Shahedipour-Sandvik, F. Shadi

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Stability of the CNHi Complex and the Blue Luminescence Band in GaN von Reshchikov, Michael Alexander, Andrieiev, Oleksandr, Vorobiov, Mykhailo, McEwen, Ben, Shahedipour-Sandvik, Shadi, Ye, Dexian, Demchenko, Denis O.

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Stability of the C N H i Complex and the Blue Luminescence Band in GaN von Reshchikov, Michael Alexander, Andrieiev, Oleksandr, Vorobiov, Mykhailo, McEwen, Ben, Shahedipour-Sandvik, Shadi, Ye, Dexian, Demchenko, Denis O.

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Incorporation and Interaction of Co‐Doped Be and Mg in GaN Grown by Metal‐Organic Chemic Vapor Deposition von McEwen, Benjamin, Rocco, Emma, Meyers, Vincent, Lanjani, Alireza, Omranpour, Shadi, Andrieiev, Oleksandr, Vorobiov, Mykhailo, Demchenko, Denis O., Reshchikov, Michael A., Shahedipour‐Sandvik, Fatemeh Shadi

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MOCVD Growth and Characterization of Be-Doped GaN von McEwen, Benjamin, Reshchikov, Michael A., Rocco, Emma, Meyers, Vincent, Hogan, Kasey, Andrieiev, Oleksandr, Vorobiov, Mykhailo, Demchenko, Denis O., Shahedipour-Sandvik, Fatemeh

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Entrance management system and operation method thereof von Andrieiev, Oleksandr, Keum, Jieun

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Method and device for performing access control by using authentication certificate based on authority information von Andrieiev, Oleksandr, Keum, Jieun

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Electronic device authentication method, and apparatus according thereto von Andrieiev, Oleksandr, Keum, Jieun

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METHOD AND DEVICE FOR PERFORMING ACCESS CONTROL BY USING AUTHENTICATION CERTIFICATE BASED ON AUTHORITY INFORMATION von KEUM, Jieun, ANDRIEIEV, Oleksandr

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ELECTRONIC DEVICE AUTHENTICATION METHOD, AND APPARATUS ACCORDING THERETO von KEUM, Jieun, ANDRIEIEV, Oleksandr

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ENTRANCE MANAGEMENT SYSTEM AND OPERATION METHOD THEREOF von KEUM, Jieun, ANDRIEIEV, Oleksandr

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DEVICE AND METHOD FOR ACCESSING SERVICE USING AUTHENTICATION OF ELECTRONIC DEVICE von KEUM, Jieun, ANDRIEIEV, Oleksandr

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Physics of acceptors in GaN: Koopmans tuned HSE hybrid functional calculations and experiment von Demchenko, Denis O, Vorobiov, Mykhailo, Andrieiev, Oleksandr, Reshchikov, Mikhail A, MvEwen, Benjamin, Shahedipour-Sandvik, Fatemeh

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