Gender-specific differences in feasibility of pre-lacrimal window approach von Andrianakis, A., Moser, U., Wolf, A., Kiss, P., Holzmeister, C., Andrianakis, D., Tomazic, P. V.

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Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium von Londos, C A, Andrianakis, A, Emtsev, V V, Ohyama, H

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IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon von Londos, C. A., Andrianakis, A., Sgourou, E. N., Emtsev, V. V., Ohyama, H.

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Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin von Angeletos, T., Sgourou, E. N., Andrianakis, A., Diamantopoulou, A., Chroneos, A., Londos, C. A.

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Extent of optico-carotid recess is significantly associated with presence of bony dehiscences and bone thickness in the optico-carotid area von Andrianakis, A., Kiss, P., Moser, U., Wolf, A., Holzmeister, C., Koutp, A., Grechenig, P., Pilsl, U., Tomazic, P.V.

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Pupillometry in critically ill patients with COVID-19: a prospective study von Vrettou, Charikleia S., Korompoki, Eleni, Sarri, Katerina, Papachatzakis, Ioannis, Theodorakopoulou, Maria, Chrysanthopoulou, Evangelia, Andrianakis, Ilias A., Routsi, Christina, Zakynthinos, Spyros, Kotanidou, Anastasia

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Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in Si von Londos, C.A., Andrianakis, A., Emtsev, V.V., Oganesyan, G.A., Ohyama, H.

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The effect of germanium doping on the evolution of defects in silicon von Londos, C.A., Andrianakis, A., Emtsev, V.V., Oganesyan, G.A., Ohyama, H.

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Isochronal annealing studies of carbon-related defects in irradiated Si von Londos, C.A., Potsidi, M.S., Antonaras, G.D., Andrianakis, A.

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IR studies of oxygen–vacancy defects in electron-irradiated Ge-doped Si von Londos, C.A., Andrianakis, A., Aliprantis, D., Ohyama, H., Emtsev, V.V., Oganesyan, G.A.

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Production and evolution of A-centers in n -type Si1−xGex von Sgourou, E. N., Andrianakis, A., Londos, C. A., Chroneos, A.

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Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing von Londos, C. A., Andrianakis, A., Emtsev, V., Ohyama, H.

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Production of vacancy-oxygen defect in electron irradiated silicon in the presence of self-interstitial-trapping impurities von Voronkov, V. V., Falster, R., Londos, C. A., Sgourou, E. N., Andrianakis, A., Ohyama, H.

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Defects in Ge-doped Cz-Si annealed under high stress von Misiuk, A., Yang, Deren, Surma, B., Londos, C.A., Bak-Misiuk, J., Andrianakis, A.

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Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon von Londos, C. A., Andrianakis, A., Sgourou, E. N., Emtsev, V., Ohyama, H.

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Life-threatening bilateral empyema and mediastinitis complicating infectious mononucleosis von Andrianakis, Ilias A, Kotanidou, Anastasia N, Pitaridis, Marinos T, Saroglou, George J, Exarhos, Dimitrios N, Roussos, Charis S, Bellenis, Ion P

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IR studies of the impact of Ge doping on the successive conversion of VO n defects in Czochralski-Si containing carbon von Londos, C. A., Andrianakis, A., Sgourou, E. N., Emtsev, V. V., Ohyama, H.

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IR studies of the impact of Ge doping on the successive conversion of VO{sub n} defects in Czochralski-Si containing carbon von Londos, C. A., Andrianakis, A., Sgourou, E. N., Emtsev, V. V., Ohyama, H.

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Conditions Associated with ST-Segment Elevation von Ako, Junya, Honda, Yasuhiro, Fitzgerald, Peter J

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IR Studies on VON, CIOI and CICS Defects in Ge-Doped Cz-Si von Londos, Charalamos A., Emtsev, Valentin V., Andrianakis, A., Misiuk, Andrzej, Sgourou, Efstratia N., Ohyama, H.

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