Charge State Control and Relaxation in an Atomically Doped Silicon Device von Andresen, Søren E. S, Brenner, Rolf, Wellard, Cameron J, Yang, Changyi, Hopf, Toby, Escott, Christopher C, Clark, Robert G, Dzurak, Andrew S, Jamieson, David N, Hollenberg, Lloyd C. L

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Controlled shallow single-ion implantation in silicon using an active substrate for sub- 20 - keV ions von Jamieson, D. N., Yang, C., Hopf, T., Hearne, S. M., Pakes, C. I., Prawer, S., Mitic, M., Gauja, E., Andresen, S. E., Hudson, F. E., Dzurak, A. S., Clark, R. G.

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Observation of dynamical ordering in a confined Wigner crystal von Glasson, P, Dotsenko, V, Fozooni, P, Lea, M J, Bailey, W, Papageorgiou, G, Andresen, S E, Kristensen, A

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The response of silicon detectors to low-energy ion implantation von Hopf, T, Yang, C, Andresen, S E, Jamieson, D N

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Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor von Andresen, S. E. S., Wu, F., Danneau, R., Gunnarsson, D., Hakonen, P. J.

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Role of electron tunneling in spin filtering at ferromagnet/semiconductor interfaces von Andresen, S. E., Steinmuller, S. J., Ionescu, A., Wastlbauer, G., Guertler, C. M., Bland, J. A. C.

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Single atom Si nanoelectronics using controlled single-ion implantation von Mitic, M., Andresen, S.E., Yang, C., Hopf, T., Chan, V., Gauja, E., Hudson, F.E., Buehler, T.M., Brenner, R., Ferguson, A.J., Pakes, C.I., Hearne, S.M., Tamanyan, G., Reilly, D.J., Hamilton, A.R., Jamieson, D.N., Dzurak, A.S., Clark, R.G.

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Spin-dependent quasiparticle transport in aluminum single-electron transistors von Ferguson, A J, Andresen, S E, Brenner, R, Clark, R G

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Low-Noise Detection System for the Counted Implantation of Single Ions in Silicon von Gauja, E., Dzurak, A.S., Andresen, S.E., Hopf, C.Y.T., Jamieson, D.N., Hearne, S.M.

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Dependence of Curie temperature on the thickness of epitaxial (Ga,Mn)As film von Sorensen, BS, Sadowski, Janusz, Andresen, SE, Lindelof, PE

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Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface von Andresen, S. E., So/rensen, B. S., Rasmussen, F. B., Lindelof, P. E., Sadowski, J., Guertler, C. M., Bland, J. A. C.

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Observation of dynamical ordering in a confined Wigner crystal von Glasson, P., Dotsenko, V., Fozooni, P., Lea, M.J., Bailey, W., Papageorgiou, G., Andresen, S.E., Kristensen, A.

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Highly sensitive and broadband carbon nanotube radio-frequencysingle-electron transistor von Andresen, S. E. S., Wu, F., Danneau, R., Gunnarsson, D., Hakonen, P. J.

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Measuring the Charge and Spin States of Electrons on Individual Dopant Atoms in Silicon von Andresen, Søren E. S., McCamey, Dane R., Brenner, Rolf, Ahrens, Marc A., Mitic, Mladen, Chan, Victor C., Gauja, Eric, Hudson, Fay E., Ferguson, Andrew J., Buehler, Tilo M., Reilly, David J., Clark, Robert G., Dzurak, Andrew S., Hamilton, Alex R., Wellard, Cameron J., Yang, Changyi, Hopf, Toby, McCallum, Jeff, Jamieson, David N., Hollenberg, Lloyd C. L., Hutchison, Wayne D., Huebl, Hans, Brandt, Martin S.

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Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor von Andresen, S E S, F Wu, Danneau, R, Gunnarsson, D, Hakonen, P J

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Quantum effects in ion implanted devices von Jamieson, D.N., Chan, V., Hudson, F.E., Andresen, S.E., Yang, C., Hopf, T., Hearne, S.M., Pakes, C.I., Prawer, S., Gauja, E., Dzurak, A.S., Clark, R.G.

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Dependence of Curie temperature on the thickness of epitaxial (Ga,Mn)As film von Sørensen, B. S., Sadowski, J., Andresen, S. E., Lindelof, P. E.

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Microelectronics on liquid helium von Glasson, P, Andresen, S.Erfurt, Ensell, G, Dotsenko, V, Bailey, W, Fozooni, P, Kristensen, A, Lea, M.J

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Spin-Dependent Quasiparticle Transport in Aluminum Single Electron Transistors von Ferguson, A. J, Andresen, S. E, Brenner, R, Clark, R. G

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Development of a single ion detection system for the implantation of donors with nanoscale precision von Hopf, T., Yang, C., Jamieson, D.N., Tamanyan, G., Andresen, S.E., Gauja, E., Dzurak, A.S., Clark, R.G.

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