Ambient Temperature Effects on Evaluation of Plant Physiological Activity Using Plant Bioelectric Potential von Hasegawa, Yuki, Yamanaka, Genta, Ando, Ki, Uchida, Hidekazu

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Study of Plant Bioelectric Potential Response Due to Photochemical Reaction and Carbon-Fixation Reaction in Photosynthetic Process von Ando, Ki, Hasegawa, Yuki, Yaji, Tamaki, Uchida, Hidekazu

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Accuracy improvement of genetic algorithm for obtaining floating-point solution von Nishijima, Kengo, Kanasugi, Akinori, Ando, Ki

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Study of plant bioelectric potential response due to photosynthesis reaction von Ando, Ki, Hasegawa, Yuki, Yaji, Tamaki, Uchida, Hidekazu

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Improvement of photosynthetic rate evaluation by plant bioelectric potential using illuminating information and a neural network von Ando, Ki, Igarashi, Hiroshi, Shinoda, Hiroyuki, Mutsukura, Nobuki

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Hardware implementation of evolutionary algorithms using dynamic reconfiguration technology von Kanasugi, Akinori, Tsukahara, Akihiko, Ando, Ki

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Properties of highly oriented SnO2 layer grown by UHV sputter epitaxy method von Ando, Ki, Shinoda, Hiroyuki, Mutsukura, Nobuki

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Interface synthesis between software chip model and target board von Lee, Seungjong, Ki, Ando, Park, In-Cheol, Kyung, Chong-Min

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Growth of Ag-doped ZnS layer by sputter epitaxy method von Doi, Yuta, Mizuno, A-i, Ando, Ki, Shinoda, Hiroyuki, Mutsukura, Nobuki

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Growth of GaN layer by UHV sputter-epitaxy method von Fukuda, Naoki, Iwamoto, Masaki, Osada, Takuya, Mizuno, A-i, Ando, Ki, Shinoda, Hiroyuki, Mutsukura, Nobuki

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Growth of AlN layer by UHV sputter-epitaxy method (Ⅱ) von Iwamoto, Masaki, Osada, Takuya, Fukuda, Naoki, Mizuno, A-i, Ando, Ki, Shinoda, Hiroyuki, Mutsukura, Nobuki

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Growth of single-crystalline GaN layer by UHV sputter-epitaxy method (Ⅱ) von Iwamoto, Masaki, Osada, Takuya, Mizuno, A-i, Ando, Ki, Shinoda, Hiroyuki, Mutsukura, Nobuki

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Study of surface states on single-crystalline GaN layer (Ⅲ) von Mizuno, Ai, Suzuki, Reo, Yoshimura, Tsubasa, Watanabe, Wataru, Ando, Ki, Shinoda, Hiroyuki, Mutsukura, Nobuki

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Growth of ZnO single-crystalline layer by UHV sputter epitaxy method von Ogura, Kohei, Shinta, Tomoki, Mizuno, A-i, Ando, ki, Shinoda, Hiroyuki, Mutsukura, Nobuki

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Study of surface states on GaN single-crystalline layer (Ⅱ) von Mizuno, Ai, Suzuki, Reo, Yoshimura, Tsubasa, Watanabe, Wataru, Ando, Ki, Shinoda, Hiroyuki, Mutsukura, Nobuki

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Growth of ZnS layer by UHV sputter epitaxy method (II) von Kumei, Toshiya, Nakamichi, Shota, Nagao, Hidekazu, Nagashima, Reon, Mizuno, A-i, Ando, Ki, Shinoda, Hiroyuki, Mutsukura, Nobuki

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Sub-Ppm Gas Sensitivity and Electrical Properties of Highly (100)-Oriented SnO 2 Thin Film on Sapphire Substrate von Ando, Ki, Hukuda, Naoki, Shinoda, Hiroyuki, Mutsukura, Nobuki

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Growth of ZnS layer by UHV sputter epitaxy method von Nagao, Hidekazu, Nagashima, Reon, Watanabe, Kazuki, Mizuno, A-i, Ando, Ki, Hiroyuki, Shinoda, Mutsukura, Nobuki

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Signal processing device of optical coherence tomography system von ANDO KI

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Improvement of photosynthetic rate evaluation by plant bioelectric potential using illuminating information and a neural network von Ando, Ki, Igarashi, Hiroshi, Shinoda, Hiroyuki, Mutsukura, Nobuki

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