Room-temperature lasing of InGaN multiquantum-well hexagonal microfacet lasers by current injection von Akasaka, Tetsuya, Ando, Seigo, Nishida, Toshio, Saito, Hisao, Kobayashi, Naoki

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High-Speed Avalanche Photodiode with a Neutral Absorption Layer for 1.55 µm Wavelength von Hirota, Yukihiro, Ando, Seigo, Ishibashi, Tadao

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Current-confining structure of InGaN hexagonal microfacet lasers by selective incorporation of Mg during selective-area MOVPE von Akasaka, Tetsuya, Ando, Seigo, Nishida, Toshio, Saitoh, Tadashi, Kobayashi, Naoki

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Lateral quantum well wires fabricated by selective metalorganic chemical vapor deposition von FUKUI, T, ANDO, S, FUKAI, Y. K

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Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy von Akasaka, Tetsuya, Nishida, Toshio, Ando, Seigo, Kobayashi, Naoki

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Novel hexagonal-facet GaAs/AlGaAs laser grown by selective area metalorganic chemical vapour deposition von ANDO, S, KOBAYASHI, N, ANDO, H

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Hexagonal-facet laser with optical waveguides grown by selective area metalorganic chemical vapor deposition von ANDO, S, KOBAYASHI, N, ANDO, H

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Lateral-size control of trench-buried quantum wires using GaAs/AlAs superlattice layers von SOGAWA, T, ANDO, S, KANBE, H

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Triangular-facet laser with optical waveguides grown by selective area metalorganic chemical vapor deposition von ANDO, S, KOBAYASHI, N, ANDO, H

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MOCVD methods for fabricating GaAs quantum wires and quantum dots von Fukui, Takashi, Saito, Hisao, Kasu, Makoto, Ando, Seigo

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Selective epitaxy of GaAs/AlGaAs on (111) B substrates by MOCVD and applications to nanometer structures von Ando, Seigo, Chang, Shi Shya, Fukui, Takashi

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Self-limited facet growth for GaAs tetrahedral quantum dots von ANDO, S, HONDA, T, KOBAYASHI, N

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Short-Cavity Fabry-Perot Lasers Using Crystal Facets von Ando, Seigo, Kobayashi, Naoki, Ando, Hiroaki

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Triangular-facet lasers coupled by a rectangular optical waveguide von ANDO, S, KOBAYASHI, N, ANDO, H

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GaAs/AlAs trench-buried quantum wires (<20 nm × 20 nm) fabricated by metalorganic chemical vapor deposition on nonplanar substrates von SOGAWA, T, ANDO, S, KANBE, H

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Lateral growth process of GaAs over tungsten gratings by metalorganic chemical vapor deposition von ASAI, H, ANDO, S

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Selective area metalorganic vapor phase epitaxy of thick crack-free GaN films on trenched SiC substrates von Akasaka, Tetsuya, Ando, Seigo, Nishida, Toshio, Saito, Hisao, Kobayashi, Naoki

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Selective MOVPE of GaN and AlxGa1−xN with smooth vertical facets von Akasaka, Tetsuya, Kobayashi, Yasuyuki, Ando, Seigo, Kobayashi, Naoki, Kumagai, Masami

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SEMICONDUCTOR DEVICE von YOKOYAMA, Haruki, MURAMOTO, Yoshifumi, ANDO, Seigo, YOSHIMATSU, Toshihide, ISHIBASHI, Tadao

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Liquid phase epitaxial growth of GaInP/AlGaAs double heterostructures for visible lasers von Oe, Kunishige, Ando, Seigo, Asai, Hiromitsu

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