Effect of the nonparabolic mass on the electron confinement in arbitrarily shaped quantum wells von CHEN, W, ANDERSSON, T. G

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Power Dependence of the Recombination Processes in the lnxGa1-xAs/GaAs Single Quantum Well von Shixiong, Qian, Jianyao, Wu, Shu, Yuan, Yufen, Li, Andersson, Thorwald G, Zonggui, Chen, Wenji, Peng, Weilong, She, Zhenxin, Yu

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Critical layer thickness in InzxGa1−xAs/GaAs quantum wells studied by photoluminescence and transmission electron microscopy von Wang, Shu-Min, Andersson, Thorwald G., Kulakovskii, Vladimir D., Yao, Ji-Yong

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A multiple-state memory cell based on the resonant tunneling diode von Soderstrom, J., Andersson, T.G.

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The initial growth of vapour deposited gold films von Andersson, Thorwald G.

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[formula omitted] resonant tunneling diodes: The dependence of the peak-to-valley current ratio on barrier thickness and height von Söderström, Jan, Andersson, Thorwald G.

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Power Dependence of the Recombination Processes in the ln x Ga 1- x As/GaAs Single Quantum Well von Shixiong, Qian, Jianyao, Wu, Shu, Yuan, Yufen, Li, Andersson, Thorwald G, Zonggui, Chen, Wenji, Peng, Weilong, She, Zhenxin, Yu

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The formation of the AuGaAs(001) interface von Andersson, Thorwald G., Kanski, Janusz, Le Lay, Guy, Svensson, Stefan P.

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Critical layer thickness in In z xGa 1− xAs/GaAs quantum wells studied by photoluminescence and transmission electron microscopy von Wang, Shu-Min, Andersson, Thorwald G., Kulakovskii, Vladimir D., Yao, Ji-Yong

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Ga adsorption on GaAs(001) and Al-Ga-GaAs Schottky diodes grown by molecular-beam epitaxy von SVENSSON, S. P, KANSKI, J, ANDERSSON, T. G

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Morphology and size distributions of islands in discontinuous films von Andersson, Thorwald, Granqvist, C. G.

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