Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide von Cochrane, Corey J., Blacksberg, Jordana, Anders, Mark A., Lenahan, Patrick M.

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Data-driven RRAM device models using Kriging interpolation von Hossen, Imtiaz, Anders, Mark A., Wang, Lin, Adam, Gina C.

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An All-Digital Unified Physically Unclonable Function and True Random Number Generator Featuring Self-Calibrating Hierarchical Von Neumann Extraction in 14-nm Tri-gate CMOS von Satpathy, Sudhir K., Mathew, Sanu K., Kumar, Raghavan, Suresh, Vikram, Anders, Mark A., Kaul, Himanshu, Agarwal, Amit, Hsu, Steven, Krishnamurthy, Ram K., De, Vivek

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2.4 Gbps, 7 mW All-Digital PVT-Variation Tolerant True Random Number Generator for 45 nm CMOS High-Performance Microprocessors von Mathew, S. K., Srinivasan, S., Anders, M. A., Kaul, H., Hsu, S. K., Sheikh, F., Agarwal, A., Satpathy, S., Krishnamurthy, R. K.

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A 4-fJ/b Delay-Hardened Physically Unclonable Function Circuit With Selective Bit Destabilization in 14-nm Trigate CMOS von Satpathy, Sudhir, Mathew, Sanu K., Suresh, Vikram, Anders, Mark A., Kaul, Himanshu, Agarwal, Amit, Hsu, Steven K., Chen, Gregory, Krishnamurthy, Ram K., De, Vivek K.

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mu RNG: A 300-950 mV, 323 Gbps/W All-Digital Full-Entropy True Random Number Generator in 14 nm FinFET CMOS von Mathew, Sanu K., Johnston, David, Satpathy, Sudhir, Suresh, Vikram, Newman, Paul, Anders, Mark A., Kaul, Himanshu, Agarwal, Amit, Hsu, Steven K., Chen, Gregory, Krishnamurthy, Ram K.

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A 7-Gbps SCA-Resistant Multiplicative-Masked AES Engine in Intel 4 CMOS von Kumar, Raghavan, Suresh, Vikram B., Taneja, Sachin, Anders, Mark A., Hsu, Steven, Agarwal, Amit, De, Vivek, Mathew, Sanu K.

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A Time-/Frequency-Domain Side-Channel Attack Resistant AES-128 and RSA-4K Crypto-Processor in 14-nm CMOS von Kumar, Raghavan, Liu, Xiaosen, Suresh, Vikram, Krishnamurthy, Harish K., Satpathy, Sudhir, Anders, Mark A., Kaul, Himanshu, Ravichandran, Krishnan, De, Vivek, Mathew, Sanu K.

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Nonresonant Transmission Line Probe for Sensitive Interferometric Electron Spin Resonance Detection von Shrestha, Pragya R, Abhyankar, Nandita, Anders, Mark A, Cheung, Kin P, Gougelet, Robert, Ryan, Jason T, Szalai, Veronika, Campbell, Jason P

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Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface si... von Anders, Mark A., Lenahan, Patrick M., Edwards, Arthur H., Schultz, Peter A., Van Ginhoven, Renee M.

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Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance von Anders, Mark A., Lenahan, Patrick M., Cochrane, Corey J., Lelis, Aivars J.

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53 Gbps Native (2 ^) ^ Composite-Field AES-Encrypt/Decrypt Accelerator for Content-Protection in 45 nm High-Performance Microprocessors von Mathew, S K, Sheikh, F, Kounavis, M, Gueron, S, Agarwal, A, Hsu, S K, Kaul, H, Anders, M A, Krishnamurthy, R K

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Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs von Lenahan, Patrick M., Anders, Mark A., Ryan, Jason T.

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The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping von Lenahan, Patrick M., Anders, Mark A., Lelis, Aivars J.

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Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance von Waskiewicz, Ryan J., Anders, Mark A., Lenahan, Patrick M., Lelis, Aivars J.

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Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station von McCrory, Duane J., Anders, Mark A., Ryan, Jason T., Shrestha, Pragya R., Cheung, Kin P., Lenahan, Patrick M., Campbell, Jason P.

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Erratum: Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide von Cochrane, Corey J., Blacksberg, Jordana, Anders, Mark A., Lenahan, Patrick M.

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Magnetic Field Sensing with Atomic Scale Defects in SiC Devices von Cochrane, Corey J., Lenahan, Patrick M., Anders, Mark A., Blacksberg, Jordana

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A Surprising Result: “Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs von Lelis, Aivars J., Anders, Mark A., Lenahan, Patrick M.

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A 617-TOPS/W All-Digital Binary Neural Network Accelerator in 10-nm FinFET CMOS von Knag, Phil C., Chen, Gregory K., Sumbul, H. Ekin, Kumar, Raghavan, Hsu, Steven K., Agarwal, Amit, Kar, Monodeep, Kim, Seongjong, Anders, Mark A., Kaul, Himanshu, Krishnamurthy, Ram K.

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