Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations von Kalaev, V.V., Lukanin, D.P., Zabelin, V.A., Makarov, Yu.N., Virbulis, J., Dornberger, E., Ammon, W.von

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Physical modelling of the melt flow during large-diameter silicon single crystal growth von Gorbunov, L., Pedchenko, A., Feodorov, A., Tomzig, E., Virbulis, J., Ammon, W.V.

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Formation of stacking faults in nitrogen-doped silicon single crystals von Ammon, W.v, Hölzl, R, Wetzel, T, Zemke, D, Raming, G, Blietz, M

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Analysis of magnetic field effect on 3D melt flow in CZ Si growth von Ivanov, N.G., Korsakov, A.B., Smirnov, E.M., Khodosevitch, K.V., Kalaev, V.V., Makarov, Yu.N., Dornberger, E., Virbulis, J., von Ammon, W.

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Results of the project "Silicon for Mass Unit and Standard" (SIMUS) von Alasia, F., Basile, G., D'Agostino, G., Peuto, A., Pettorruso, S., Becker, P., Bettin, H., Kuetgens, U., Stuempe, J., Valkiers, S., Taylor, P., De Bievre, P., Jensen, L., Servidori, M., Spirito, P., Zeni, L., Amato, G., Riemann, H., Haertwig, J., Ammon, Wv

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Microdefects in Nitrogen Doped FZ Silicon Revealed by Li+ Drifting von Knowlton, W.B., Walton, J.T., von Ammon, Wilfried, Wong, Y.K., Zulehner, W., Lee, J.S., Haller, Eugene E.

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Silicon crystal growth von Ammon, W.v.

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Non-radiative energy transfer from tunable donor states to Eu3+ ions von Yersin, H., Ammon, W.v., Stock, M., Gliemann, G.

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