p-Type II–VI compounds doped by rare-earth elements von Georgobiani, A.N, Kotljarevsky, M.B, Kidalov, V.V, Rogozin, I.V, Aminov, U.A

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Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities von Georgobiani, A.N, Aminov, U.A, Dravin, V.A, Lepnev, L.S, Mullabaev, I.D, Ursaki, V.V, Iljukhina, Z.P

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Vapour phase and liquid phase doping of ZnSe by group III elements von Georgobiani, A.N., Aminov, U.A., Korostelin, Yu.V., Kozlovsky, V.I., Nasibov, A.S., Shapkin, P.V.

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The edge ultraviolet luminescence of GaN:Zn films activated in a nitrogen plasma von Georgobiani, A. N., Gruzintsev, A. N., Aminov, U. A., Vorob’ev, M. O., Khodos, I. I.

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The influence of the preliminary ion implantation in the ZnSe on the properties of the ZnOZnSe structures, obtained by the radical beam gettering epitaxy method von Georgobiani, A.N, Kotljarevsky, M.B, Aminov, U.A, Kidalov, V.V, Rogozin, I.V

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