Stress relaxation at forming GaSe–Si(1 1 1) interfaces von Amimer, K, Eddrief, M, Sébenne, C.A

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Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy von Amimer, K., Georgakilas, A., Tsagaraki, K., Androulidaki, M., Cengher, D., Toth, L., Pecz, B., Calamiotou, M.

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Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy von Georgakilas, A., Tóth, László S., Czigány, Zsolt, Amimer, K., Pécz, Béla

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Correlation of the structural and optical properties of GaN grown on vicinal (0 0 1) GaAs substrates with the plasma-assisted MBE growth conditions von Georgakilas, A, Amimer, K, Tzanetakis, P, Hatzopoulos, Z, Cengher, M, Pecz, B, Czigany, Zs, Toth, L, Baidakova, M.V, Sakharov, A.V, Davydov, V.Yu

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Band structure of an epitaxial thin film of InSe determined by angle-resolved ultraviolet photoelectron spectroscopy von Amokrane, A, Proix, F, Monkad, S El, Cricenti, A, Barchesi, C, Eddrief, M, Amimer, K, Sébenne, C A

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MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates von Georgakilas, A, Czigany, Zs, Amimer, K, Davydov, V.Yu, Toth, L, Pecz, B

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Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy von Amimer, K., Georgakilas, A., Androulidaki, M., Tsagaraki, K., Pavelescu, M., Mikroulis, S., Constantinidis, G., Arbiol, J., Peiro, F., Cornet, A., Calamiotou, M., Kuzmik, J., Davydov, V.Y.

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Reconstructions upon thermal desorption in ultra high vacuum of InSe covered Si(111) surfaces von PROIX, F, PANELLA, V, EL MONKAD, S, GLEBOV, A, LACHARME, J. P, EDDRIEF, M, AMIMER, K, SEBENNE, C. A, TOENNIES, J. P

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Investigation of Different Si(111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE von Androulidaki, M., Georgakilas, A., Peiro, F., Amimer, K., Zervos, M., Tsagaraki, K., Dimakis, M., Cornet, A.

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Influence of MBE Growth Temperature on the Properties of Cubic GaN Grown Directly on GaAs Substrates von Georgakilas, A., Androulidaki, M., Tsagaraki, K., Amimer, K., Constantinidis, G., Pelekanos, N. T., Calamiotou, M., Czigany, Zs, Pecz, B.

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Brillouin scattering study of epitaxial InSe films grown on the surface von Panella, V, Carlotti, G, Socino, G, Giovannini, L, Eddrief, M, Amimer, K, Sébenne, C

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Brillouin scattering study of epitaxial InSe films grown on the Si(111)1 x 1-H surface von PANELLA, V, CARLOTTI, G, SOCINO, G, GIOVANNINI, L, EDDRIEF, M, AMIMER, K, SEBENNE, C

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A technology for GaAs-based optoelectronic integrated circuits von Cengher, D., Aperathitis, E., Androulidaki, M., Deligeorgis, G., Cengher, M., Amimer, K., Hatzopoulos, Z., Georgakilas, A.

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Interface properties of MBE grown [formula omitted] heterojunctions von El Monkad, S., Eddrief, M., Lacharme, J.P., Amimer, K., Sébenne, C.A.

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MBE growth of different hexagonal GaN crystal structures or vicinal (100) GaAs substrates von GEORGAKILAS, A, CZIGANY, Zs, AMIMER, K, DAVYDOV, V. Yu, TOTH, L, PECZ, B

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Correlation of the structural and optical properties of GaN grown on vicinal (001) GaAs substrates with the plasma-assisted MBE growth conditions von GEORGAKILAS, A, AMIMER, K, DAVYDOV, V. Yu, TZANETAKIS, P, HATZOPOULOS, Z, CENGHER, M, PECZ, B, CZIGANY, Zs, TOTH, L, BAIDAKOVA, M. V, SAKHAROV, A. V

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Interface properties of MBE grown InSe/Si(111) heterojunctions von EL MONKAD, S, EDDRIEF, M, LACHARME, J. P, AMIMER, K, SEBENNE, C. A

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Material properties of gan grown by radio frequency plasma-assisted molecular beam epitaxy on si von Androulidaki, M., Amimer, K., Tsagaraki, K., Kayambaki, M., Mikroulis, S., Constantinidis, G., Hatzopoulos, Z., Georgakilas, A.

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Nanometric AlNi Precipitation in a 84.68 wt.% Cu-11.25 wt.%Al-4.07 Wt%Ni Shape Memory Alloy von Amimer, N., Chentouf, S.M., Bouabdallah, M., Hamouda, Khaled, Cheniti, H.

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