Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors von Ameen, Tarek A., Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib

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Dielectric Engineered Tunnel Field-Effect Transistor von Ilatikhameneh, Hesameddin, Ameen, Tarek A., Klimeck, Gerhard, Appenzeller, Joerg, Rahman, Rajib

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Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs von Ameen, Tarek A., Ilatikhameneh, Hesameddin, Fay, Patrick, Seabaugh, Alan, Rahman, Rajib, Klimeck, Gerhard

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Sensitivity Challenge of Steep Transistors von Ilatikhameneh, Hesameddin, Ameen, Tarek A., Chen, ChinYi, Klimeck, Gerhard, Rahman, Rajib

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Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot von Ameen, Tarek A, Ilatikhameneh, Hesameddin, Tankasala, Archana, Hsueh, Yuling, Charles, James, Fonseca, Jim, Povolotskyi, Michael, Kim, Jun Oh, Krishna, Sanjay, Allen, Monica S, Allen, Jeffery W, Rahman, Rajib, Klimeck, Gerhard

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Doping Profile Engineered Triple Heterojunction TFETs With 12-nm Body Thickness von Chen, Chin-Yi, Tseng, Hsin-Ying, Ilatikhameneh, Hesameddin, Ameen, Tarek A., Klimeck, Gerhard, Rodwell, Mark J., Povolotskyi, Michael

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Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs von Chen, Chin-Yi, Ameen, Tarek A., Ilatikhameneh, Hesameddin, Rahman, Rajib, Klimeck, Gerhard, Appenzeller, Joerg

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Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots von Ilatikhameneh, Hesameddin, Ameen, Tarek A., Klimeck, Gerhard, Rahman, Rajib

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Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors von Ameen, Tarek A., El-Batawy, Yasser M., Abouelsaood, A. A.

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A Multiscale Modeling of Triple-Heterojunction Tunneling FETs von Huang, Jun Z., Long, Pengyu, Povolotskyi, Michael, Ilatikhameneh, Hesameddin, Ameen, Tarek A., Rahman, Rajib, Rodwell, Mark J. W., Klimeck, Gerhard

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Modeling light absorption by bound electrons in self-assembled quantum dots von Ameen, Tarek A., El-Batawy, Yasser M., Abouelsaood, A. A.

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Polarization dependence of absorption by bound electrons in self-assembled quantum dots von Ameen, Tarek A., El-Batawy, Yasser M.

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Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions von Ameen, Tarek A., Ilatikhameneh, Hesameddin, Huang, Jun Z., Povolotskyi, Michael, Rahman, Rajib, Klimeck, Gerhard

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Bound to continuum absorption coefficient for spherical and conical quantum dots von Ameen, Tarek A., El-Batawy, Yasser M.

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A Theoretical Study of Light Absorption in Self Assembled Quantum Dots von A. Ameen, Tarek, M. El-Batawy, Yasser, A. Abouelsaood, A.

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Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene von Chen, Fan W., Ilatikhameneh, Hesameddin, Ameen, Tarek A., Klimeck, Gerhard, Rahman, Rajib

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Doping profile engineered triple heterojunction TFETs with 12 nm body thickness von Chin-Yi, Chen, Hsin-Ying Tseng, Ilatikhameneh, Hesameddin, Ameen, Tarek A, Klimeck, Gerhard, Rodwell, Mark J, Povolotskyi, Michael

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Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors von Ameen, Tarek A, Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib

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Channel thickness optimization for ultra thin and 2D chemically doped TFETs von Chin-Yi, Chen, Ameen, Tarek A, Ilatikhameneh, Hesameddin, Rahman, Rajib, Klimeck, Gerhard, Appenzeller, Joerg

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Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions von Ameen, Tarek A, Ilatikhameneh, Hesameddin, Huang, Jun Z, Povolotskyi, Michael, Rahman, Rajib, Klimeck, Gerhard

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