Quaternary barriers for improved performance of GaN-based HEMTs von Lim, Taek, Aidam, Rolf, Waltereit, Patrick, Pletschen, Wilfried, Quay, Rüdiger, Kirste, Lutz, Ambacher, and Oliver

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Analysis of the potential of gallium nitride based monolithic power amplifiers in the microwave domain with more than an octave bandwidth = Untersuchung des Potenzials von Galliumn... von Dennler, Philippe

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Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker von Mußer, Markus

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Nanomechanics of Single Crystalline Tungsten Nanowires von Cimalla, Volker, Röhlig, Claus-Christian, Pezoldt, Jörg, Niebelschütz, Merten, Ambacher, Oliver, Brückner, Klemens, Hein, Matthias A., Weber, Jochen, Milenkovic, Srdjan, Smith, Andrew Jonathan, Hassel, Achim Walter

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AlGaN, GaN sensors for direct monitoring of fluids and bioreactions von Cimalla, Irina Nicoleta

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Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN von Wolff, Niklas, Fichtner, Simon, Haas, Benedikt, Islam, Md Redwanul, Niekiel, Florian, Kessel, Maximilian, Ambacher, Oliver, Koch, Christoph, Wagner, Bernhard, Lofink, Fabian, Kienle, Lorenz

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Determination of the graphene–graphite ratio of graphene powder by Raman 2D band symmetry analysis von Roscher, Sarah, Hoffmann, René, Ambacher, Oliver

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Highly Isolating and Broadband Single-Pole Double-Throw Switches for Millimeter-Wave Applications Up to 330 GHz von Thome, Fabian, Ambacher, Oliver

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Clarification of the spontaneous polarization direction in crystals with wurtzite structure von Fichtner, Simon, Yassine, Mohamed, Van de Walle, Chris G., Ambacher, Oliver

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Broadband High-Power W-Band Amplifier MMICs Based on Stacked-HEMT Unit Cells von Thome, Fabian, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver

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Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures von Fiorentini, Vincenzo, Bernardini, Fabio, Ambacher, Oliver

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Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si von Leone, Stefano, Benkhelifa, Fouad, Kirste, Lutz, Manz, Christian, Quay, Ruediger, Ambacher, Oliver

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Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures von Ligl, Jana, Leone, Stefano, Manz, Christian, Kirste, Lutz, Doering, Philipp, Fuchs, Theodor, Prescher, Mario, Ambacher, Oliver

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A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation von Heinz, Felix, Thome, Fabian, Leuther, Arnulf, Ambacher, Oliver

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Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology von Thome, Fabian, Leuther, Arnulf, Ambacher, Oliver

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A Scalable Small-Signal and Noise Model for High-Electron-Mobility Transistors Working Down to Cryogenic Temperatures von Heinz, Felix, Thome, Fabian, Schwantuschke, Dirk, Leuther, Arnulf, Ambacher, Oliver

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Elastic properties of rock salt ScN thin films investigated by laser ultrasound von Pupyrev, Pavel D., Mihalic, Saskia, Nair, Akash, Straňák, Patrik, Mayer, Elena, Hörich, Florian, Dadgar, Armin, Strittmatter, André, Ambacher, Oliver, Mayer, Andreas

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Effects of solvent and annealing on the improved performance of solar cells based on poly(3-hexylthiophene): Fullerene von Al-Ibrahim, Maher, Ambacher, Oliver, Sensfuss, Steffi, Gobsch, Gerhard

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Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy von Sundarapandian, Balasubramanian, Yassine, Ali, Kirste, Lutz, Baeumler, Martina, Straňák, Patrik, Fisslthaler, Evelin, Prescher, Mario, Yassine, Mohamed, Nair, Akash, Raghuwanshi, Mohit, Ambacher, Oliver

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Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition von Manz, Christian, Leone, Stefano, Kirste, Lutz, Ligl, Jana, Frei, Kathrin, Fuchs, Theodor, Prescher, Mario, Waltereit, Patrick, Verheijen, Marcel A, Graff, Andreas, Simon-Najasek, Michél, Altmann, Frank, Fiederle, Michael, Ambacher, Oliver

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