Growth and applications of Group III-nitrides von Ambacher, O

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Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications von Cimalla, V, Pezoldt, J, Ambacher, O

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Wireless sub-THz communication system with high data rate von Koenig, S., Lopez-Diaz, D., Antes, J., Boes, F., Henneberger, R., Leuther, A., Tessmann, A., Schmogrow, R., Hillerkuss, D., Palmer, R., Zwick, T., Koos, C., Freude, W., Ambacher, O., Leuthold, J., Kallfass, I.

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Electrical and structural characterization of YAlN at high alloy concentrations von Afshar, N., Yassine, M., Yassine, A., Maier, N., Ambacher, O.

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Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures von Ambacher, O., Christian, B., Yassine, M., Baeumler, M., Leone, S., Quay, R.

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Review: Structural, elastic, and thermodynamic properties of cubic and hexagonal ScxAl1−xN crystals von Ambacher, O., Mihalic, S., Yassine, M., Yassine, A., Afshar, N., Christian, B.

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Electron accumulation and distribution at interfaces of hexagonal ScxAl1−xN/GaN- and ScxAl1−xN/InN-heterostructures von Ambacher, O., Yassine, A., Yassine, M., Mihalic, S., Wade, E., Christian, B.

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Influence of alloying and structural transition on the directional elastic and isotropic thermodynamic properties of wurtzite and layered hexagonal ScxAl1−xN crystals von Ambacher, O., Mihalic, S., Wade, E., Yassine, M., Yassine, A., Feil, N., Christian, B.

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Rayleigh waves in nonpolar Al0.7Sc0.3N(11 2 ¯0) films with enhanced electromechanical coupling and quality factor von Feil, N. M., Nair, A., Pashchenko, V., Kirste, L., Ambacher, O.

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Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures von Yassine, M., Yassine, A., Nair, A., Sundarapandian, B., Afshar, N., Kirste, L., Fichtner, S., Ambacher, O.

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Erratum: “Influence of alloying and structural transition on the directional elastic and isotropic thermodynamic properties of wurtzite and layered hexagonal ScxAl1−xN crystals” [J... von Ambacher, O., Mihalic, S., Wade, E., Yassine, M., Yassine, A., Feil, N., Christian, B.

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Thermal expansion coefficient of ScN(111) thin films grown on Si(111) determined by X-ray diffraction von Ciprian, L., Mihalic, S., Lüttich, C., Hörich, F., Wade, E., Christian, B., Dadgar, A., Ambacher, O.

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Influence of structural properties on the ferroelectric behavior of hexagonal AlScN von Yassine, M., Nair, A., Fammels, J., Wade, E., Fu, Z., Yassine, A., Kirste, L., Ambacher, O.

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Publisher's Note: “Influence of structural properties on the ferroelectric behavior of hexagonal AlScN” [J. Appl. Phys. 132, 114101 (2022)] von Yassine, M., Nair, A., Fammels, J., Wade, E., Fu, Z., Yassine, A., Kirste, L., Ambacher, O.

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Structural properties and epitaxial relation of cubic rock salt ScxAl1−xN/ScN/Si von Mihalic, S., Wade, E., Lüttich, C., Hörich, F., Sun, C., Fu, Z., Christian, B., Dadgar, A., Strittmatter, A., Ambacher, O.

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Piezoelectric properties of polycrystalline AlN thin films for MEMS application von Tonisch, K., Cimalla, V., Foerster, Ch, Romanus, H., Ambacher, O., Dontsov, D.

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Properties of higher-order surface acoustic wave modes in Al1−xScxN/sapphire structures von Feil, N. M., Mayer, E., Nair, A., Christian, B., Ding, A., Sun, C., Mihalic, S., Kessel, M., Žukauskaitė, A., Ambacher, O.

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Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range von Hahn, L., Fuchs, F., Kirste, L., Driad, R., Rutz, F., Passow, T., Köhler, K., Rehm, R., Ambacher, O.

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Phase Stabilization and Phonon Properties of Single Crystalline Rhombohedral Indium Oxide von Wang, Ch. Y, Dai, Y, Pezoldt, J, Lu, B, Kups, Th, Cimalla, V, Ambacher, O

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The Mn3+/2+ acceptor level in group III nitrides von Graf, T., Gjukic, M., Brandt, M. S., Stutzmann, M., Ambacher, O.

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