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Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm
Veröffentlicht in Microelectronics
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Statistical Analysis and Comparison of 2T and 3T1D e-DRAM Minimum Energy Operation
Veröffentlicht in IEEE transactions on device and materials reliability
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Impact of FinFET and III-V/Ge Technology on Logic and Memory Cell Behavior
Veröffentlicht in IEEE transactions on device and materials reliability
VolltextMagazinearticle