Dopant profiling in p-i-n GaN structures using secondary electrons von Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, Ponce, Fernando A.

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Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics von Liu, Hanxiao, Fu, Houqiang, Fu, Kai, Alugubelli, Shanthan R., Su, Po-Yi, Zhao, Yuji, Ponce, Fernando A.

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High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings von Fu, Houqiang, Fu, Kai, Alugubelli, Shanthan R., Cheng, Chi-Yin, Huang, Xuanqi, Chen, Hong, Yang, Tsung-Han, Yang, Chen, Zhou, Jingan, Montes, Jossue, Deng, Xuguang, Qi, Xin, Goodnick, Stephen M., Ponce, Fernando A., Zhao, Yuji

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Implantation-and etching-free high voltage vertical GaN p-n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing von Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Alugubelli, Shanthan R., Huang, Xuanqi, Chen, Hong, Montes, Jossue, Yang, Tsung-Han, Yang, Chen, Zhou, Jingan, Ponce, Fernando A., Zhao, Yuji

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Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes von Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, McCartney, Martha R., Ponce, Fernando A.

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Determination of electronic band structure by electron holography ofetched-and-regrown interfaces in GaN p-i-n diodes von Alugubelli, Shanthan R, Fu Houqiang, Fu, Kai, Liu Hanxiao, Zhao, Yuji, McCartney, Martha R, Ponce, Fernando A

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Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress von Fu, Houqiang, Fu, Kai, Yang, Chen, Liu, Hanxiao, Hatch, Kevin A., Peri, Prudhvi, Herath Mudiyanselage, Dinusha, Li, Bingjun, Kim, Tae-Hyeon, Alugubelli, Shanthan R., Su, Po-Yi, Messina, Daniel C., Deng, Xuguang, Cheng, Chi-Yin, Vatan Meidanshahi, Reza, Huang, Xuanqi, Chen, Hong, Yang, Tsung-Han, Zhou, Jingan, Armstrong, Andrew M., Allerman, Andrew A., Yu, Edward T., Han, Jung, Goodnick, Stephen M., Smith, David J., Nemanich, Robert J., Ponce, Fernando A., Zhao, Yuji

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Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing m-plane GaN substrates von Fu, Houqiang, Zhang, Xiaodong, Fu, Kai, Liu, Hanxiao, Alugubelli, Shanthan R., Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Yang, Tsung-Han, Xu, Ke, Ponce, Fernando A., Zhang, Baoshun, Zhao, Yuji

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