An 18-GHz 300-mW SiGe power HBT von Zhenqiang Ma, Ningyue Jiang, Guogong Wang, Alterovitz, S.A.

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High power X-band (8.4 GHz) SiGe/Si heterojunction bipolar transistor von Ma, Z, Mohammadi, S, Bhattacharya, P, Katehi, L P B, Alterovitz, S A, Ponchak, G E

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Ku-band (12.6GHz) SiGe/Si high-power heterojunction bipolar transistors von Ma, Z, Mohammadi, S, Bhattacharya, P, Katehi, L P B, Alterovitz, S A, Ponchak, G E, Strohm, K M, Luy, J-F

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A high-power and high-gain X-band Si/SiGe/Si heterojunction bipolar transistor von Zhenqiang Ma, Mohammadi, S., Bhattacharya, P., Katehi, L.P.B., Alterovitz, S.A., Ponchak, G.E.

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The effect of strain on the base resistance and transit time of ungraded and compositional-graded SiGe HBTs von Rosenfeld, D., Alterovitz, S.A.

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Transport properties of epitaxial lift-off films von Mena, R. A., Schacham, S. E., Young, P. G., Haugland, E. J., Alterovitz, S. A.

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Compensation in epitaxial cubic SiC films von Segall, B., Alterovitz, S. A., Haugland, E. J., Matus, L. G.

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Superconductivity in Ternary Compounds I: Structural, Electronic, and Lattice Properties von Fischer, Øystein, Maple, M. Brian

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Carrier transit time through a base with dopant dependent mobility von Rosenfeld, D., Alterovitz, S.A.

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Enhancement of Shubnikov-de Haas Oscillations by Carrier Modulation von Schacham, S. E., Haugland, E. J., Alterovitz, S. A.

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Room-Temperature Determination of Two-Dimensional Electron Gas Concentration and Mobility in Heterostructures von Schacham, S. E., Mena, R. A., Haugland, E. J., Alterovitz, S. A.

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High electron mobility in SiGe/Si n -MODFET structures on sapphire substrates von Mueller, C.H., Croke, E.T., Alterovitz, S.A.

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RF properties of epitaxial lift-off HEMT devices von Young, P.G., Alterovitz, S.A., Mena, R.A., Smith, E.D.

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The effect of fluctuations on the electrical transport behaviour in YBa2Cu3O7-x von Vitta, S, Alterovitz, S A, Stan, M A

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High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation von Alterovitz, S. A., Mueller, C. H., Croke, E. T.

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Applications of variable angle spectroscopic ellipsometry to strained SiGe alloy heterostructures von Heyd, A.R., Alterovitz, S.A., Croke, E.T., Wang, K.L., Lee, C.H.

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Measured propagation characteristics of coplanar waveguide on semi-insulating 4H-SiC through 800 K von Ponchak, G.E., Alterovitz, S.A., Downey, A.N., Freeman, J.C., Schwartz, Z.D.

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Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices von SIEG, R. M, ALTEROVITZ, S. A, CROKE, E. T, HARRELL, M. J

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RF control of epitaxial lift-off PHEMT's under backside illumination von Young, P.G., Simons, R.N., Alterovitz, S.A., Romanofsky, R.R., Smith, E.D.

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Ellipsometric characterization of In0.52Al0.48As and of modulation doped field effect transistor structures on InP substrates von ALTEROVITZ, S. A, SIEG, R. M, PAMULAPATI, J, BHATTACHARYA, P. K

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