Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers von Altayar, A.R, Al-Saymari, F.A., Repiso, E., Hanks, L., Craig, A.P., Bentley, M., Delli, E., Carrington, P.J., Krier, A., Marshall, A.R.J.

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