Dry Etching of Mo based layers and its interdependence with a poly-Si/MoOxNy/TiN/HfO2 gate stack von Paraschiv, V., Boullart, W., Altamirano-Sánchez, E.

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Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm node on a 6T-SRAM cell von Altamirano-Sánchez, E., Paraschiv, V., Demand, M., Boullart, W.

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Wetting of deep hydrophilic nanoholes by aqueous solutions von Vereecke, G., Darcos, A., Iino, H., Holsteyns, F., Sanchez, E. Altamirano

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Studying the efficacy of hydrogen plasma treatment for enabling the etching of thermally annealed ruthenium in chemical solutions von Le, Q.T., Gül Arslan, E., Rip, J., De Coster, H., Verdonck, P., Radisic, D., Schleicher, F., Vaesen, I., Conard, T., Altamirano-Sanchez, E.

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Dry Etch Fin Patterning of a Sub-22nm Node SRAM Cell: EUV Lithography New Dry Etch Challenges von Altamirano-Sanchez, Efrain, Yamaguchi, Yoko, Lindain, Jeffrey, Horiguchi, Naoto, Ercken, Monique, Demand, Marc, Boullart, Werner

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Challenges in using optical lithography for the building of a 22 nm node 6T-SRAM cell von Ercken, M., Altamirano-Sanchez, E., Baerts, C., Brus, S., De Backer, J., Delvaux, C., Demand, M., Horiguchi, N., Locorotondo, S., Vandeweyer, T., Veloso, A., Verhaegen, S.

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Challenges in using optical lithography for the building of a 22nm node 6T-SRAM cell von Ercken, M., Altamirano-Sanchez, E., Baerts, C., Brus, S., De Backer, J., Delvaux, C., Demand, M., Horiguchi, N., Locorotondo, S., Vandeweyer, T., Veloso, A., Verhaegen, S.

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Effect of Surface Chemistry on Ruthenium Wet Etching von Le, Quoc Toan, Doms, M., Altamirano-Sanchez, Efrain, Kesters, E.

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Wet Cleaning/Etching of NiAl Thin Film von Altamirano-Sanchez, Efrain, Gül Arslan, Esen, Soulie, Jean Philippe, Le, Quoc Toan, Fundu, Kevin

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Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water von Homkar, Suvidyakumar, Horiguchi, Naoto, Iino, Hideaki, Arimura, Hiroaki, Holsteyns, Frank, Alessio Verni, Giuseppe, Ogawa, Yuuichi, Chang, Ren Jie, Givens, Michael, Brus, Stephan, Lai, Ju Geng, Gan, Nobuko, Tanaka, Yoichi, Altamirano-Sanchez, Efrain, Pacco, Antoine, Oniki, Yusuke

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(Invited) Vertical Nanowire FET Integration and Device Aspects von Veloso, Anabela, Altamirano-Sánchez, Efraín, Brus, Stephan, Chan, B. T., Cupak, Miroslav, Dehan, Morin, Delvaux, Christie, Devriendt, Katia, Eneman, Geert, Ercken, Monique, Huynh-Bao, Trong, Ivanov, Tsvetan, Matagne, Philippe, Merckling, Clement, Paraschiv, Vasile, Ramesh, Siva, Rosseel, Erik, Rynders, Luc, Sibaja-Hernandez, Arturo, Suhard, Samuel, Tao, Zheng, Vecchio, Emma, Waldron, Niamh, Yakimets, Dmitry, De Meyer, Kristin, Mocuta, Dan, Collaert, Nadine, Thean, Aaron

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Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22nm node on a 6T-SRAM cell von Altamirano-Sánchez, E., Paraschiv, V., Demand, M., Boullart, W.

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Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate length von Collaert, N., von Arnim, K., Rooyackers, R., Vandeweyer, T., Mercha, A., Parvais, B., Witters, L., Nackaerts, A., Altamirano Sanchez, E., Demand, M., Hikavyy, A., Demuynck, S., Devriendt, K., Bauer, F., Ferain, I., Veloso, A., De Meyer, K., Biesemans, S., Jurczak, M.

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(Invited) Challenges on Surface Conditioning in 3D Device Architectures: Triple-Gate FinFETs, Gate-All-Around Lateral and Vertical Nanowire FETs von Veloso, Anabela, Paraschiv, Vasile, Vecchio, Emma, Devriendt, Katia, Li, Waikin, Simoen, Eddy, Chan, B. T., Tao, Zheng, Rosseel, Erik, Loo, Roger, Milenin, Alexey P., Kunert, Bernardette, Teugels, Lieve, Sebaai, Farid, Lorant, Christophe, van Dorp, Dennis, Altamirano-Sánchez, Efraín, Brus, Stephan, Marien, Philippe, Fleischmann, Claudia, Melkonyan, Davit, Huynh-Bao, Trong, Eneman, Geert, Hellings, Geert, Sibaja-Hernandez, Arturo, Matagne, Philippe, Waldron, Niamh, Mocuta, Dan, Collaert, Nadine

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(Invited) Selective Etches for Gate-All-Around (GAA) Device Integration: Opportunities and Challenges von Oniki, Yusuke, Altamirano-Sánchez, Efraín, Holsteyns, Frank

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1mA/um-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D von Mitard, J., Witters, L., Hellings, G., Krom, R., Franco, J., Eneman, G., Hikavyy, A., Vincent, B., Loo, R., Favia, P., Dekkers, H., Altamirano Sanchez, E., Vanderheyden, A., Vanhaeren, D., Eyben, P., Takeoka, S., Yamaguchi, S., Van Dal, M. J. H., Wang, W.-E, Hong, S.-H, Vandervorst, W., De Meyer, K., Biesemans, S., Absil, P., Horiguchi, N., Hoffmann, T.

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Self-aligned double patterning of 1× nm FinFETs; A new device integration through the challenging geometry von Kim, M.-S, Vandeweyer, T., Altamirano-Sanchez, E., Dekkers, H., Van Besien, E., Tsvetanova, D., Richard, O., Chew, S., Boccardi, G., Horiguchi, N.

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Separation of the metallic and non-metallic fraction from printed circuit boards employing green technology von Estrada-Ruiz, R.H., Flores-Campos, R., Gámez-Altamirano, H.A., Velarde-Sánchez, E.J.

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Virus Control of Cell Metabolism for Replication and Evasion of Host Immune Responses von Moreno-Altamirano, María Maximina B, Kolstoe, Simon E, Sánchez-García, Francisco Javier

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Mechanical behavior of glass fiber‐reinforced Nylon‐6 syntactic foams and its Young's modulus numerical study von Yáñez‐Macías, Roberto, Rivera‐Salinas, Jorge E., Solís‐Rosales, Silvia, Orduña‐Altamirano, Daniel, Ruíz‐Mendoza, David, Herrera‐Guerrero, Adán, Lara‐Sanchez, Jesús, González‐Morones, Pablo, García‐Hernández, Zureima, Hernández‐Hernández, Ernesto, Gregorio‐Jáuregui, Karla M.

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