Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity von Zhuravlev, A.G., Khoroshilov, V.S., Alperovich, V.L.

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Relaxational kinetics of photoemission and photon-enhanced thermionic emission from p-GaAs surface with nonequilibrium Cs overlayers von Zhuravlev, A.G., Alperovich, V.L.

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Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers von Zhuravlev, A.G., Alperovich, V.L.

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Surface passivation and morphology of GaAs(1 0 0) treated in HCl-isopropanol solution von Alperovich, V.L., Tereshchenko, O.E., Rudaya, N.S., Sheglov, D.V., Latyshev, A.V., Terekhov, A.S.

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Langmuir evaporation of GaAs(111)A and GaAs(111)B: Monte Carlo simulation von Spirina, A.A., Alperovich, V.L., Shwartz, N.L.

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Photoemission and photon-enhanced thermionic emission: Effect of jump in electron mass von Alperovich, V.L., Kazantsev, D.M., Zhuravlev, A.G., Shvartsman, L.D.

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Kinetics of anticrossing between slip traces and vicinal steps on crystal surfaces von Coupeau, C., Kazantsev, D.M., Drouet, M., Alperovich, V.L.

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Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation von Kazantsev, D.M., Akhundov, I.O., Rudaya, N.S., Kozhukhov, A.S., Alperovich, V.L., Latyshev, A.V.

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Na 2 KSb / Cs x Sb interface engineering for high-efficiency photocathodes von Rozhkov, S.A., Bakin, V.V., Rusetsky, V.S., Kustov, D.A., Golyashov, V.A., Demin, A.Yu, Scheibler, H.E., Alperovich, V.L., Tereshchenko, O.E.

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Anisotropy in Ostwald ripening and step-terraced surface formation on GaAs(001): Experiment and Monte Carlo simulation von Kazantsev, D.M., Akhundov, I.O., Shwartz, N.L., Alperovich, V.L., Latyshev, A.V.

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Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing von Akhundov, I.O., Kazantsev, D.M., Alperovich, V.L., Sheglov, D.V., Kozhukhov, A.S., Latyshev, A.V.

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Monte Carlo simulation of GaAs(001) surface smoothing in equilibrium conditions von Kazantsev, D.M., Akhundov, I.O., Karpov, A.N., Shwartz, N.L., Alperovich, V.L., Terekhov, A.S., Latyshev, A.V.

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Structural and electronic transformations at the Cs/GaAs [formula omitted] interface von Tereshchenko, O.E., Voronin, V.S., Scheibler, H.E., Alperovich, V.L., Terekhov, A.S.

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Kinetics of atomic smoothing GaAs(001) surface in equilibrium conditions von Akhundov, I.O., Alperovich, V.L., Latyshev, A.V., Terekhov, A.S.

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Formation and interaction of dislocation-induced and vicinal monatomic steps on a GaAs(001) surface under stress relaxation von Akhundov, I.O., Kazantsev, D.M., Alperovich, V.L., Rudaya, N.S., Rodyakina, E.E., Latyshev, A.V.

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Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(1 0 0) and (1 1 1) von Alperovich, V.L, Tereshchenko, O.E, Litvinov, A.N, Terekhov, A.S

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Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation von Kazantsev, D. M., Akhundov, I. O., Alperovich, V. L., Shwartz, N. L., Kozhukhov, A. S., Latyshev, A. V.

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Composition and structure of chemically prepared GaAs(1 1 1)A and (1 1 1)B surfaces von Tereshchenko, O.E., Alperovich, V.L., Terekhov, A.S.

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New material for photoemission electron source: semiconductor alloy InGaAsP grown on GaAs substrate von Alperovich, V.L., Bolkhovityanov, Yu.B., Paulish, A.G., Terekhov, A.S.

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Polarized cathodoluminescence induced by low-energy spin-polarized electrons injected in p-GaAs(Cs,O) von Alperovich, V.L., Terekhov, A.S., Jaroshevich, A.S., Lampel, G., Lassailly, Y., Peretti, J., Rougemaille, N., Wirth, T.

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