Spectral Maximum in the Terahertz Photoconductance of a Quantum Point Contact von Kazantsev, D. M., Alperovich, V. L., Tkachenko, V. A., Kvon, Z. D.

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Asymmetry of anticrossing between atomic steps on metal and semiconductor surfaces von Khoroshilov, V S, Kazantsev, D M, Alperovich, V L, Coupeau, C, Drouet, M

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Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation von Kazantsev, D M, Akhundov, I O, Kozhuhov, A S, Khoroshilov, V S, Shwartz, N L, Alperovich, V L, Latyshev, A V

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Monte Carlo simulation of roughening at step-terraced surfaces von Kazantsev, D M, Shwartz, N L, Alperovich, V L

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Surface passivation and morphology of GaAs(1 0 0) treated in HCl-isopropanol solution von Alperovich, V.L., Tereshchenko, O.E., Rudaya, N.S., Sheglov, D.V., Latyshev, A.V., Terekhov, A.S.

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Anisotropy in Ostwald ripening and step-terraced surface formation on GaAs(001): Experiment and Monte Carlo simulation von Kazantsev, D.M., Akhundov, I.O., Shwartz, N.L., Alperovich, V.L., Latyshev, A.V.

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Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity von Zhuravlev, A. G., Khoroshilov, V. S., Alperovich, V. L.

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Photoemission from p-GaAs(Cs,O) under transition from negative to positive electron affinity von Protopopov, D E, Khoroshilov, V S, Zhuravlev, A G, Kazantsev, D M, Alperovich, V L

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Monte Carlo simulation of GaAs(001) surface smoothing in equilibrium conditions von Kazantsev, D.M., Akhundov, I.O., Karpov, A.N., Shwartz, N.L., Alperovich, V.L., Terekhov, A.S., Latyshev, A.V.

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Erratum to: Several Articles in JETP Letters von Semenin, N. V., Borisenko, A. S., Zalivako, I. V., Semerikov, I. A., Aksenov, M. D., Khabarova, K. Yu, Kolachevsky, N. N., Glazyrin, S. I., Lykov, V. A., Karpov, S. A., Karlykhanov, N. G., Gryaznykh, D. A., Bychenkov, V. Yu, Karelina, L. N., Shuravin, N. S., Ionin, A. S., Bakurskiy, S. V., Egorov, S. V., Golovchanskiy, I. A., Chichkov, V. I., Bol’ginov, V. V., Ryazanov, V. V., Kazantsev, D. M., Alperovich, V. L., Tkachenko, V. A., Kvon, Z. D.

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Formation and interaction of dislocation-induced and vicinal monatomic steps on a GaAs(001) surface under stress relaxation von Akhundov, I.O., Kazantsev, D.M., Alperovich, V.L., Rudaya, N.S., Rodyakina, E.E., Latyshev, A.V.

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Optimization of conditions for thermal smoothing GaAs surfaces von Akhundov, I O, Kazantsev, D M, Kozhuhov, A S, Alperovich, V L

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Thermodynamic and kinetic roughening: Monte Carlo simulation and experiment on GaAs von Kazantsev, D M, Akhundov, I O, Kozhukhov, A S, Alperovich, V L

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Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers von Zhuravlev, A G, Kazantsev, D M, Khoroshilov, V S, Kozhukhov, A S, Alperovich, V L

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Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation von Kazantsev, D. M., Akhundov, I. O., Alperovich, V. L., Shwartz, N. L., Kozhukhov, A. S., Latyshev, A. V.

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Thermal roughening of GaAs surface by dislocation-induced step-flow sublimation von Akhundov, I O, Kazantsev, D M, Kozhuhov, A S, Alperovich, V L

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Etching or Stabilization of GaAs(001) under Alkali and Halogen Adsorption von Tereshchenko, O. E, Paget, D, Toropetsky, K. V, Alperovich, V. L, Eremeev, S. V, Bakulin, A. V, Kulkova, S. E, Doyle, B. P, Nannarone, S

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Spectroscopy of systems with time variable parameters: photoreflectance of GaAs(001) under cesium adsorption von Zhuravlev, A G, Scheibler, H E, Jaroshevich, A S, Alperovich, V L

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Semiconductor surfaces with negative electron affinity von Bakin, V. V., Pakhnevich, A. A., Zhuravlev, A. G., Shornikov, A. N., Akhundov, I. O., Tereshechenko, O. E., Alperovich, V. L., Scheibler, H. E., Terekhov, A. S.

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Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity von Zhuravlev, A.G., Khoroshilov, V.S., Alperovich, V.L.

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