Electronic effects of surface In atoms at clean and hydrogenated InP(100)4×2 surfaces von Woll, J., Allinger, Th, Polyakov, V., Schaefer, J.A., Goldmann, A., Erfurth, W.

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Core-level photoemission study of hydrogenated GaAs(100) surfaces von Stietz, F., Sloboshanin, S., Engelhard, H., Allinger, Th, Goldmann, A., Schaefer, J.A.

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Catalytic oxidation of Si(100) and InP(100) surfaces von Schaefer, J.A., Lodders, F., Allinger, Th, Nannarone, S., Anderson, J., Lapeyre, G.J.

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Etching of GaAs(100) by Activated Hydrogen von Schaefer, J. A, Persch, V, Stock, S, Allinger, Th, Goldmann, A

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Reaction of hydrogen with InP(100)4×2: Surface properties von Stietz, F., Persch, V., Allinger, Th, Schaefer, J.A., Lapeyre, G.J.

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Interaction of Hydrogen and Methane with Inp100) and GaAs(100) Surfaces von Stietz, F., Woll, J., Persch, V., Allinger, Th, Erfurth, W., Goldmann, A., Schaefer, J. A.

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Catalytic oxidation of Si(100) and InP(100) surfaces von Schaefer, J.A., Lodders, F., Allinger, Th, Nannarone, S., Anderson, J., Lapeyre, G.J.

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