Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance von King, M. P., Wu, X., Eller, M., Samavedam, S., Shaneyfelt, M. R., Silva, A. I., Draper, B. L., Rice, W. C., Meisenheimer, T. L., Felix, J. A., Zhang, E. X., Haeffner, T. D., Ball, D. R., Shetler, K. J., Alles, M. L., Kauppila, J. S., Massengill, L. W.

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Linear and non-linear patterns of internationalisation and funding in academic spin-offs von Fernández-Alles, M. L., Camelo-Ordaz, C., Diánez-González, J. P., Castillo-Rodríguez, E. C.

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Ozone-exposure and annealing effects on graphene-on-SiO2 transistors von Zhang, E X, Newaz, K M, Wang, B, Zhang, C X, Fleetwood, D M, Bolotin, K I, Schrimpf, R D, Pantelides, S T, Alles, M L

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On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology von Loveless, T. D., Kauppila, J. S., Jagannathan, S., Ball, D. R., Rowe, J. D., Gaspard, N. J., Atkinson, N. M., Blaine, R. W., Reece, T. R., Ahlbin, J. R., Haeffner, T. D., Alles, M. L., Holman, W. T., Bhuva, B. L., Massengill, L. W.

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Effect of Device Variants in 32 nm and 45 nm SOI on SET Pulse Distributions von Maharrey, J. A., Quinn, R. C., Loveless, T. D., Kauppila, J. S., Jagannathan, S., Atkinson, N. M., Gaspard, N. J., Zhang, E. X., Alles, M. L., Bhuva, B. L., Holman, W. T., Massengill, L. W.

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Single-Event Upset Characterization Across Temperature and Supply Voltage for a 20-nm Bulk Planar CMOS Technology von Kauppila, J. S., Kay, W. H., Haeffner, T. D., Rauch, D. L., Assis, T. R., Mahatme, N. N., Gaspard, N. J., Bhuva, B. L., Alles, M. L., Holman, W. T., Massengill, L. W.

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Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs von El-Mamouni, F., Zhang, E. X., Ball, D. R., Sierawski, B., King, M. P., Schrimpf, R. D., Reed, R. A., Alles, M. L., Fleetwood, D. M., Linten, D., Simoen, E., Vizkelethy, G.

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Radiation effects in new materials for nano-devices von Schrimpf, R.D., Fleetwood, D.M., Alles, M.L., Reed, R.A., Lucovsky, G., Pantelides, S.T.

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Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes von Ball, D. R., Hutson, J. M., Javanainen, A., Lauenstein, J.-M., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Sierawski, B. D., Witulski, A. F., Reed, R. A., Schrimpf, R. D.

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Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation von Jagannathan, S., Loveless, T. D., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Haeffner, T. D., Kauppila, J. S., Mahatme, N., Bhuva, B. L., Alles, M. L., Holman, W. T., Witulski, A. F., Massengill, L. W.

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Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS von DasGupta, S., Witulski, A.F., Bhuva, B.L., Alles, M.L., Reed, R.A., Amusan, O.A., Ahlbin, J.R., Schrimpf, R.D., Massengill, L.W.

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Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs von Ball, D. R., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Hutson, J. M., Lauenstein, J.-M.

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Alpha Particle-Induced Persistent Effects in a COTS 3-D-Integrated CMOS Imager von Hu, M. D., McCurdy, M. W., Sierawski, B. D., Schrimpf, R. D., Reed, R. A., Alles, M. L.

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Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes von Cadena, R. M., Ball, D. R., Zhang, E. X., Islam, S., Senarath, A., McCurdy, M. W., Farzana, E., Speck, J. S., Karom, N., O'Hara, A., Tuttle, B. R., Pantelides, S. T., Witulski, A. F., Galloway, K. F., Alles, M. L., Reed, R. A., Fleetwood, D. M., Schrimpf, R. D.

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Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs von Ball, D. R., Sierawski, B. D., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Witulski, A. F., Reed, R. A., Schrimpf, R. D., Javanainen, A., Lauenstein, J.-M

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Charge Collection and Charge Sharing in a 130 nm CMOS Technology von Amusan, O.A., Witulski, A.F., Massengill, L.W., Bhuva, B.L., Fleming, P.R., Alles, M.L., Sternberg, A.L., Black, J.D., Schrimpf, R.D.

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Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics von Liang, C. D., Ma, R., Su, Y., O'Hara, A., Zhang, E. X., Alles, M. L., Wang, P., Zhao, S. E., Pantelides, S. T., Koester, S. J., Schrimpf, R. D., Fleetwood, D. M.

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A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit von Kauppila, J.S., Sternberg, A.L., Alles, M.L., Francis, A.M., Holmes, J., Amusan, O.A., Massengill, L.W.

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Probing the Single-Event Sensitivity of a COTS 3D-Integrated Imager with Alpha Particle Irradiation von Hu, M. D., Padgett, F., McCurdy, M. W., Sierawski, B. D., Schrimpf, R. D., Reed, R. A., Alles, M. L.

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Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors von Watkins, A. C., Vibbert, S. T., D'Amico, J. V., Kauppila, J. S., Haeffner, T. D., Ball, D. R., Zhang, E. X., Warren, K. M., Alles, M. L., Massengill, L. W.

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