High voltage and high current density vertical GaN power diodes von Armstrong, A.M, Allerman, A.A, Fischer, A.J, King, M.P, van Heukelom, M.S, Moseley, M.W, Kaplar, R.J, Wierer, J.J, Crawford, M.H, Dickerson, J.R

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High voltage GaN p-n diodes formed by selective area regrowth von Armstrong, A.M, Pickrell, G.P, Allerman, A.A, Crawford, M.H, Glaser, C.E, Smith, T, Abate, V.M

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Al0.3Ga0.7N PN diode with breakdown voltage >1600 V von Allerman, A.A, Armstrong, A.M, Fischer, A.J, Dickerson, J.R, Crawford, M.H, King, M.P, Moseley, M.W, Wierer, J.J, Kaplar, R.J

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Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices von Allerman, A.A., Crawford, M.H., Miller, M.A., Lee, S.R.

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Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates von Allerman, A.A., Crawford, M.H., Lee, S.R., Clark, B.G.

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Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys von Allerman, A.A., Crawford, M.H., Fischer, A.J., Bogart, K.H.A., Lee, S.R., Follstaedt, D.M., Provencio, P.P., Koleske, D.D.

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Temperature Analysis of Threshold Current in Infrared Vertical-Cavity Surface-Emitting Lasers von Chen Chen, Leisher, P.O., Allerman, A.A., Geib, K.M., Choquette, K.D.

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Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation von Young, E.W., Choquette, K.D., Chuang, S.L., Geib, K.M., Fischer, A.J., Allerman, A.A.

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Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes von Miller, M.A., Crawford, M.H., Allerman, A.A., Cross, K.C., Banas, M.A., Shul, R.J., Stevens, J., Bogart, K.H.A.

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Dislocation reduction in AlGaN grown on patterned GaN von Follstaedt, D.M., Allerman, A.A., Lee, S.R., Michael, J.R., Bogart, K.H.A., Crawford, M.H., Missert, N.A.

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Fabrication and performance of two-dimensional matrix addressable arrays of integrated vertical-cavity lasers and resonant cavity photodetectors von Geib, K.M., Choquette, K.D., Serkland, D.K., Allerman, A.A., Hargett, T.W.

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High-speed wavelength-division multiplexing and demultiplexing using monolithic quasi-planar VCSEL and resonant photodetector arrays with strained InGaAs quantum wells von Yuxin Zhou, Cheng, J., Allerman, A.A.

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Picosecond polarization dynamics and noise in pulsed vertical-cavity surface-emitting lasers von Blansett, E.L., Raymer, M.G., Guoqiang Cui, Khitrova, G., Gibbs, H.M., Serkland, D.K., Allerman, A.A., Geib, K.M.

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InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs von Kurtz, Steven R., Allerman, A. A., Jones, E. D., Gee, J. M., Banas, J. J., Hammons, B. E.

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Al 0 .3 Ga 0.7 N PN diode with breakdown voltage >1600 V von Allerman, A.A., Armstrong, A.M., Fischer, A.J., Dickerson, J.R., Crawford, M.H., King, M.P., Moseley, M.W., Wierer, J.J., Kaplar, R.J.

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Comparison of wavelength splitting for selectively oxidized, ion implanted, and hybrid vertical-cavity surface-emitting lasers von Young, E.W., Choquette, K.D., Seurin, J.-F.P., Shun Lien Chuang, Geib, K.M., Allerman, A.A.

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Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells von Kaplar, R.J., Kwon, D., Ringel, S.A., Allerman, A.A., Kurtz, Steven R., Jones, E.D., Sieg, R.M.

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Electrically steerable lasers using wide-aperture VCSELs von Cohen, M.I., Allerman, A.A., Choquette, K.D., Jagadish, C.

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Two-dimensional 8×8 photoreceiver array and VCSEL drivers for high-throughput optical data links von Hietala, V.M., Chun, C., Laskar, J., Choquette, K.D., Geib, K.M., Allerman, A.A., Hindi, J.J.

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Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition von Biefeld, R.M., Allerman, A.A., Kurtz, S.R., Baucom, K.C.

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