High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates von Sheppard, S.T., Doverspike, K., Pribble, W.L., Allen, S.T., Palmour, J.W., Kehias, L.T., Jenkins, T.J.

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Progress in SiC: from material growth to commercial device development von Carter, Jr, C.H., Tsvetkov, V.F., Glass, R.C., Henshall, D., Brady, M., Müller, St.G., Kordina, O., Irvine, K., Edmond, J.A., Kong, H.-S., Singh, R., Allen, S.T., Palmour, J.W.

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Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics von Rodwell, M.J.W., Pusl, J., Pullela, R., Allen, S.T., Yu, R.Y., Case, M.G., Bhattacharya, U., Reddy, M., Carman, E., Kamegawa, M., Konishi, Y.

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Sublimation-Grown Semi-Insulating SiC for High Frequency Devices von Allen, S.T., Glass, R.C., Brixius, W.H., Leonard, R.T., Carter Jr, Calvin H., Powell, Adrian R., Brady, M.F., Jenny, Jason R., Müller, Stephan G., McD. Hobgood, H., Malta, D.P., Tsvetkov, Valeri F., Palmour, John W.

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High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production von Allen, S.T., Glass, R.C., Fechko, G., Brixius, W.H., Leonard, R.T., Henshall, D., Carter Jr, Calvin H., Powell, Adrian R., Brady, M.F., Jenny, Jason R., Müller, Stephan G., McD. Hobgood, H., Malta, D.P., Tsvetkov, Valeri F., Palmour, John W.

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Racial differences in overdose training, naloxone possession, and naloxone administration among clients and nonclients of a syringe services program von Jones, A.A., Park, J.N., Allen, S.T., Schneider, K.E., Weir, B.W., Hunt, D., Sherman, S.G.

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Applications of SiC MESFETs and GaN HEMTs in power amplifier design von Pribble, W.L., Palmour, J.W., Sheppard, S.T., Smith, R.P., Allen, S.T., Smith, T.J., Ring, Z., Sumakeris, J.J., Saxler, A.W., Milligan, J.W.

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Facilitation of Fast Backward Priming After Left Cerebellar Continuous Theta-Burst Stimulation von Allen-Walker, Louise S. T., Bracewell, R. Martyn, Thierry, Guillaume, Mari-Beffa, Paloma

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Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency product von Giboney, K.S., Nagarajan, R.L., Reynolds, T.E., Allen, S.T., Mirin, R.P., Rodwell, M.J.W., Bowers, J.E.

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Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor von Burk, Albert A., Allen, S.T., Paisley, Michael J., O'Loughlin, Michael J., Powell, Adrian R., Brady, M.F., Müller, Stephan G.

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RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates von Allen, S.T., Hagleitner, H., Henning, Jason, Sumakeris, Joseph J., Sriram, Saptharishi, Janke, C., Alcorn, T.S., Ward, A., Wieber, K., Jenny, Jason R.

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Millimeter-wave on-wafer waveform and network measurements using active probes von Yu, R.Y., Reddy, M., Pusl, J., Allen, S.T., Case, M., Rodwell, M.J.W.

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High power hybrid and MMIC amplifiers using wide-bandgap semiconductor devices on semi-insulating SiC substrates von Sheppard, S.T., Smith, R.P., Pribble, W.L., Ring, Z., Smith, T., Allen, S.T., Milligan, J., Palmour, J.W.

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DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K von Hatfield, C.W., Bilbro, G.L., Allen, S.T., Palmour, J.W.

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Silicon Carbide MESFET's for High-Power S-Band Applications von Allen, S.T., Glass, R.C., Sumakeris, Joseph J., Alcorn, T.S., Carter Jr, Calvin H., Palmour, John W., Sadler, R.A.

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Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide von Allen, S.T., Palmour, John W., Sheppard, S.T., Doverspike, K., Pribble, W.L., Leonard, M.

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Picosecond measurements by free-running electro-optic sampling von Giboney, K.S., Allen, S.T., Rodwell, M.J.W., Bowers, J.E.

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A broadband free-space millimeter-wave vector transmission measurement system von Konishi, Y., Kamegawa, M., Case, M., Ruai Yu, Allen, S.T., Rodwell, M.J.W.

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Multiplexer/demultiplexer IC technology for 100 Gb/s fiber-optic transmission von Pullela, R., Bhattacharya, U., Allen, S.T., Rodwell, M.J.W.

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An Internally-matched GaN HEMT Amplifier with 550-watt Peak Power at 3.5 GHz von Wu, Y.-F., Wood, S.M., Smith, R.P., Sheppard, S., Allen, S.T., Parikh, P., Milligan, J.

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