Examination of the Possibility of Negative Capacitance Using Ferroelectric Materials in Solid State Electronic Devices von Krowne, C. M, Kirchoefer, S. W, Chang, W, Pond, J. M, Alldredge, L. M. B

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Spin-polarized conduction in oxide magnetic tunnel junctions with magnetic and nonmagnetic insulating barrier layers von Alldredge, L. M. B., Chopdekar, R. V., Nelson-Cheeseman, B. B., Suzuki, Y.

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Probing the role of the barrier layer in magnetic tunnel junction transport von Nelson-Cheeseman, B. B., Chopdekar, R. V., Alldredge, L. M. B., Bettinger, J. S., Arenholz, E., Suzuki, Y.

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Phase transitions and the temperature dependence of the dielectric properties in tetragonally strained barium strontium titanate films von Alldredge, L. M. B., Chang, Wontae, Kirchoefer, Steven W., Pond, Jeffrey M.

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Magnetism and transport of CuCr2Se4 thin films von BETTINGER, J. S, CHOPDEKAR, R. V, BUTLER, W. H, SUZUKI, Y, LIBERATI, M, NEULINGER, J. R, CHSHIEV, M, TAKAMURA, Y, ALLDREDGE, L. M. B, ARENHOLZ, E, IDZERDA, Y. U, STACY, A. M

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Device loss of (Ba,Sr)TiO3 film-based capacitors at 1–20 GHz von Chang, Wontae, Alldredge, L. M. B., Kirchoefer, Steven W., Pond, Jeffrey M.

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Effect of large strain on dielectric and ferroelectric properties of Ba0.5Sr0.5TiO3 thin films von Xiao, Bo, Avrutin, Vitaliy, Liu, Hongrui, Rowe, Emmanuel, Leach, Jacob, Gu, Xing, Özgür, Ümit, Morkoç, Hadis, Chang, W., Alldredge, L. M. B., Kirchoefer, S. W., Pond, J. M.

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Complex oxide-based magnetic tunnel junctions with nonmagnetic insulating barrier layers von Alldredge, L. M. B., Chopdekar, R. V., Nelson-Cheeseman, B. B., Suzuki, Y.

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Colossal magnetoresistance materials-based junctions with antiferromagnetic insulating barriers von Alldredge, L. M. B., Suzuki, Y.

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Effect of large strain on dielectric and ferroelectric properties of Ba0.5Sr0.5TiO3 thin films von Xiao, Bo, Avrutin, Vitaliy, Liu, Hongrui, Rowe, Emmanuel, Leach, Jacob H, Gu, Xing, Özgür, Ü, Morkoç, Hadis, Chang, W, Alldredge, L. M.B, Kirchoefer, S. W, Pond, J. M

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