Selectively-sensitive metal-semiconductor-metal photodetectors based on AlGaN/AlN and ZnCdS/GaP heterostructures von Averin, S., Kuznetzov, P., Zhitov, V., Zakharov, L., Alkeev, N., Gladisheva, N.

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A bicolor photodetector of ultraviolet radiation based on a low-dimensional ZnCdS/ZnMgS/GaP heterostructure von Averin, S. V., Kuznetsov, P. I., Zhitov, V. A., Zaharov, L. Yu, Kotov, V. M., Alkeev, N. V., Gladysheva, N. B.

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An ultraviolet MSM photodetector with electrically tunable spectral sensitivity von Averin, S. V., Kuznetsov, P. I., Zhitov, V. A., Zakharov, L. Yu, Alkeev, N. V.

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Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem von Alkeev, N. V., Averin, S. V., Dorofeev, A. A., Gladysheva, N. B., Torgashin, M. Yu

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Solar-blind MSM-photodetectors based on AlxGa1−xN/GaN heterostructures grown by MOCVD von Averine, S.V., Kuznetzov, P.I., Zhitov, V.A., Alkeev, N.V.

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Giant suppression of shot noise in double barrier resonant diode: a signature of coherent transport von Aleshkin, V Ya, Reggiani, L, Alkeev, N V, Lyubchenko, V E, Ironside, C N, Figueiredo, J M L, Stanley, C R

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Electrically tunable spectral responsivity in metal–semiconductor–metal photodetectors based on low-dimensional ZnCdS/ZnMgS/GaP, ZnCdS/ZnS/GaP heterostructures von Averin, S.V., Kuznetsov, P.I., Zhitov, V.A., Zakharov, L.Yu, Kotov, V.M., Alkeev, N.V.

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Reply to Comment on 'Giant suppression of shot-noise in double barrier resonant diode: a signature of coherent transport' von Aleshkin, V Ya, Reggiani, L, Alkeev, N V, Lyubchenko, V E, Ironside, C N, Figueiredo, J M L, Stanley, C R

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Giant suppression of shot noise as signature of coherent transport in double barrier resonant diodes von Aleshkin, V Ya, Reggiani, L, Alkeev, N V, Lyubchenko, V E, Ironside, C N, Figueiredo, J M L, Stanley, C R

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Wavelength selective UV/visible metal-semiconductor-metal photodetectors von Averin, S. V., Kuznetzov, P. I., Zhitov, V. A., Zakharov, L. Yu, Kotov, V. M., Alkeev, N. V.

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Coherent approach to transport and noise in double-barrier resonant diodes von Aleshkin, V. Ya, Reggiani, L., Alkeev, N. V., Lyubchenko, V. E., Ironside, C. N., Figueiredo, J. M. L., Stanley, C. R.

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Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers von Alkeev, N. V., Averin, S. V., Dorofeev, A. A., Velling, P., Khorenko, E., Prost, W., Tegude, F. J.

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Selective UV radiation detection on the basis of low-dimensional ZnCdS/ZnMgS/GaP and ZnCdS/ZnS/GaP heterostructures von Averin, S. V., Kuznetzov, P. I., Zhitov, V. A., Zakharov, L. Yu, Kotov, V. M., Alkeev, N. V., Gladisheva, N. B.

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Metal-semiconductor-metal photodiodes based on ZnCdS/GaP wide-gap heterostructures von Averin, S. V., Kuznetsov, P. I., Zhitov, V. A., Alkeev, N. V., Kotov, V. M., Zakharov, L. Yu, Gladysheva, N. B.

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Effect of the optical excitation signal intensity on the impulse response of a metal-semiconductor-metal photodiode von Averine, S. V., Kuznetsov, P. I., Alkeev, N. V.

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AlN/AlGaN heterostructures for selective ultraviolet MSM detectors von Averin, S. V., Kuznetsov, P. I., Zhitov, V. A., Alkeev, N. V., Kotov, V. M., Dorofeev, A. A., Gladysheva, N. B.

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GaAs/AlAs resonant-tunneling diode for subharmonic mixers von Alkeev, N. V., Averin, S. V., Dorofeev, A. A., Gladysheva, N. B., Torgashin, M. Yu

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A method for measuring the shot noise in Schottky diodes with reduced barrier height von Alkeev, N. V., Averin, S. V., Dorofeev, A. A., Shashkin, V. I.

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A method for measuring the shot noise in Schottky diodes with reduced barrier height von Alkeev, N V, Averin, S V, Dorofeev, A A, Shashkin, V I

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Solar-blind MSM-photodetectors based on AlxGa1-xN/GaN heterostructures grown by MOCVD von AVERINE, S. V, KUZNETZOV, P. I, ZHITOV, V. A, ALKEEV, N. V

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