Transport Properties of a Two-Dimensional PbSe Square Superstructure in an Electrolyte-Gated Transistor von Alimoradi Jazi, M, Janssen, V. A. E. C, Evers, W. H, Tadjine, A, Delerue, C, Siebbeles, L. D. A, van der Zant, H. S. J, Houtepen, A. J, Vanmaekelbergh, D

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Defect reduction in GaN regrown on hexagonal mask structure by facet assisted lateral overgrowth von Alimoradi Jazi, M., Meisch, T., Klein, M., Scholz, F.

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Transport Properties of a Two-Dimensional PbSe Square Superstructure in an Electrolyte-Gated Transistor von Alimoradi Jazi, M, Janssen, V A E C, Evers, W H, Tadjine, A, Delerue, C, Siebbeles, Laurens D A, Van Der Zant, Herre S. J, Houtepen, A J, Vanmaekelbergh, D

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(Invited) Large Area Semipolar GaN Grown on Foreign Substrates von Scholz, Ferdinand, Caliebe, Marian, Meisch, Tobias, Alimoradi-Jazi, Maryam, Klein, Martin, Hocker, Matthias, Neuschl, Benjamin, Tischer, Ingo, Thonke, Klaus

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(20$ bar 2 $1) MOVPE and HVPE GaN grown on 2″ patterned sapphire substrates von Meisch, Tobias, Alimoradi-Jazi, Maryam, Klein, Martin, Scholz, Ferdinand

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