Resistive Switching Effect in TaN/HfOx/Ni Memristors with a Filament Formed under Local Electron-Beam Crystallization von Voronkovskii, V. A., Gerasimova, A. K., Aliev, V. Sh

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Electronic structure and charge transport in nonstoichiometric tantalum oxide von Perevalov, T V, Gritsenko, V A, Gismatulin, A A, Voronkovskii, V A, Gerasimova, A K, Aliev, V Sh, Prosvirin, I A

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Influence of the active TaN/ZrOx/Ni memristor layer oxygen content on forming and resistive switching behavior von Voronkovskii, V A, Aliev, V S, Gerasimova, A K, Perevalov, T V, Prosvirin, I P, Islamov, D R

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Improving the Sealing Efficiency of Compressor Cylinders of Gas Engine Compressors in the System of Gas-Lift Production of Offshore Fields von Aliev, V. I., Gasanov, I. I.

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VO2 film temperature dynamics at low-frequency current self-oscillations von Bortnikov, S. G., Aliev, V. Sh, Badmaeva, I. A., Mzhelskiy, I. V.

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The origin of 2.7 eV blue luminescence band in zirconium oxide von Perevalov, T. V., Gulyaev, D. V., Aliev, V. S., Zhuravlev, K. S., Gritsenko, V. A., Yelisseyev, A. P.

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Electronic structure of oxygen vacancies in hafnium oxide von Perevalov, T.V., Aliev, V.Sh, Gritsenko, V.A., Saraev, A.A., Kaichev, V.V.

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Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma von Perevalov, T. V., Iskhakzai, R. M. Kh, Prosvirin, I. P., Aliev, V. Sh, Gritsenko, V. A.

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The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide von Perevalov, T. V., Aliev, V. Sh, Gritsenko, V. A., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V.

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Titanium Nickelide Implants for Compression Anastomoses in Coloproctology von Aliev, F. Sh, Autlev, K. M., Efanov, A. V., Shneider, V. E., Aliev, V. F.

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Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma von Perevalov, T. V., Iskhakzai, R. M. Kh, Aliev, V. Sh, Gritsenko, V. A., Prosvirin, I. P.

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Current oscillations as a manifestation of spatio-temporal inhomogeneity of temperature distribution in vanadium dioxide films at semiconductor-metal phase transition von Aliev, V. Sh, Bortnikov, S. G., Mzhelskiy, I. V., Badmaeva, I. A.

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Anomalous large electrical capacitance of planar microstructures with vanadium dioxide films near the insulator-metal phase transition von Aliev, V. Sh, Bortnikov, S. G., Badmaeva, I. A.

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Lead phthalocyanine films deposited by ECR plasma-induced sublimation von Aliev, V Sh, Badmaeva, I A, Pokrovsky, L D

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Charge Transport in Nonstoichiometric SiOx Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance von Iskhakzay, R. M. Kh, Kruchinin, V. N., Aliev, V. Sh, Gritsenko, V. A., Dementieva, E. V., Zamoryanskaya, M. V.

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Prognostic factors of chemo-radiotherapy efficacy in patients with locally-advanced rectal cancer von Fedyanin, M, Tryakin, A, Pokataev, I, Bulanov, A, Sekhina, O, Chekini, D, Gordeev, S, Aliev, V, Kuzmichev, D, Mamedli, Z, Barsukov, Y, Glebovskaya, V, Tkachev, S, Chernykh, M, Kozlov, N, Tjulandin, S

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Investigations of stochastic resonance in two-terminal device with vanadium dioxide film von Aliev, V. Sh, Bortnikov, S. G., Badmaeva, I. A.

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Optical Properties of the SiOx (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide von Kruchinin, V. N., Perevalov, T. V., Aliev, V. Sh, Iskhakzai, R. M. Kh, Spesivtsev, E. V., Gritsenko, V. A., Pustovarov, V. A.

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Conduction mechanisms of TaN/HfO x /Ni memristors von Voronkovskii, V A, Aliev, V S, Gerasimova, A K, Islamov, D R

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Influence of HfOx composition on hafnium oxide-based memristor electrical characteristics von Voronkovskii, V A, Aliev, V S, Gerasimova, A K, Islamov, D R

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