Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures von Yu, Hao, Parvais, Bertrand, Zhao, Ming, Rodriguez, Raul, Peralagu, Uthayasankaran, Alian, Alireza, Collaert, Nadine

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Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures von Yu, Hao, Putcha, Vamsi, Peralagu, Uthayasankaran, Zhao, Ming, Yadav, Sachin, Alian, Alireza, Parvais, Bertrand, Collaert, Nadine

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Bandlike and localized states of extended defects in n-type In0.53Ga0.47As von Hsu, Po-Chun (Brent), Simoen, Eddy, Merckling, Clement, Eneman, Geert, Mols, Yves, Alian, AliReza, Langer, Robert, Collaert, Nadine, Heyns, Marc

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Intrinsic Robustness of TFET Subthreshold Swing to Interface and Oxide Traps: A Comparative PBTI Study of InGaAs TFETs and MOSFETs von Franco, Jacopo, Alian, AliReza, Vandooren, Anne, Verhulst, Anne S., Linten, Dimitri, Collaert, Nadine, Thean, Aaron

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Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers von O'Sullivan, Barry, Rathi, Aarti, Alian, Alireza, Yadav, Sachin, Yu, Hao, Sibaja-Hernandez, Arturo, Peralagu, Uthayasankaran, Parvais, Bertrand, Chasin, Adrian, Collaert, Nadine

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A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications von Li, Yida, Alian, Alireza, Sivan, Maheswari, Huang, Li, Ang, Kah Wee, Lin, Dennis, Mocuta, Dan, Collaert, Nadine, Thean, Aaron V.-Y.

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The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures von Hellings, Geert, Hikavyy, Andriy, Mitard, Jerome, Witters, Liesbeth, Benbakhti, Brahim, Alian, AliReza, Waldron, Niamh, Bender, Hugo, Eneman, Geert, Krom, Raymond, Schulze, Andreas, Vandervorst, Wilfried, Loo, Roger, Heyns, Marc, Meuris, Marc, Hoffmann, Thomas, De Meyer, Kristin

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Oxide Trapping in the InGaAs- \hbox \hbox System and the Role of Sulfur in Reducing the \hbox\hbox Trap Density von Alian, Alireza, Brammertz, G., Degraeve, R., Moonju Cho, Merckling, C., Lin, Dennis, Wang, Wei-E, Caymax, M., Meuris, M., De Meyer, K., Heyns, M.

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A Combined Interface and Border Trap Model for High-Mobility Substrate Metal-Oxide-Semiconductor Devices Applied to \hbox \hbox\hbox and InP Capacitors von Brammertz, G., Alian, A., Lin, D. H-C, Meuris, M., Caymax, M., Wang, W-E

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Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics von Yu, Hao, Alian, Alireza, Peralagu, Uthayasankaran, Zhao, Ming, Waldron, Niamh, Parvais, Bertrand, Collaert, Nadine

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Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs von Yu, Hao, Yadav, Sachin, O'Sullivan, Barry, Lin, Tzu-Heng, Rathi, Aarti, Alian, Alireza, Wu, Tian-Li, ElKashlan, Rana, Banerjee, Sourish, Peralagu, Uthayasankaran, Parvais, Bertrand, Collaert, Nadine

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Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs von Xiao, Dongping, Schreurs, Dominique M.M.-P, ElKashlan, Rana, Zhang, Yang, Cooman, Adam, Khaled, Ahmad, Smellie, Daanish, Alian, AliReza, Asad, Muhammad, Parvais, Bertrand, Wambacq, Piet, Peralagu, Uthayasankaran, Collaert, Nadine

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Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization von Verhulst, Anne S, Saeidi, Ali, Stolichnov, Igor, Alian, Alireza, Iwai, Hiroshi, Collaert, Nadine, Ionescu, Adrian M.

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Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n+ (In)GaN Source/Drain Layers for Radio Frequency Transistors von Banerjee, Sourish, Peralagu, Uthayasankaran, Alian, Alireza, Zhao, Ming, Hahn, Herwig, Minj, Albert, Vanhove, Benjamin, Vohra, Anurag, Parvais, Bertrand, Langer, Robert, Collaert, Nadine

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A Combined Interface and Border Trap Model for High-Mobility Substrate Metal―Oxide―Semiconductor Devices Applied to In0.53Ga0.47As and InP Capacitors von BRAMMERTZ, Guy, ALIAN, Alireza, LIN, Dennis Han-Chung, MEURIS, Marc, CAYMAX, Matty, WANG, W.-E

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Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization (vol 67, pg 377, 2020) von Verhulst, Anne S., Saeidi, Ali, Stolichnov, Igor, Alian, Alireza, Iwai, Hiroshi, Collaert, Nadine, Ionescu, Adrian M.

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Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs von Xiao, Dongping, Schreurs, Dominique M. M.-P., ElKashlan, Rana, Zhang, Yang, Cooman, Adam, Khaled, Ahmad, Smellie, Daanish, Alian, AliReza, Asad, Muhammad, Parvais, Bertrand, Wambacq, Piet, Peralagu, Uthayasankaran, Collaert, Nadine

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Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization von Verhulst, Anne S, Saeidi, Ali, Stolichnov, Igor, Alian, Alireza, Iwai, Hiroshi, Collaert, Nadine, Ionescu, Adrian M

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ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs von Wu, Wei-Min, Ker, Ming-Dou, Chen, Shih-Hung, Sibaja-Hernandez, Arturo, Yadav, Sachin, Peralagu, Uthayasankaran, Yu, Hao, Alian, AliReza, Putcha, Vamsi, Parvais, Bertrand, Collaert, Nadine, Groeseneken, Guido

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ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs von Wu, Wei-Min, Ker, Ming-Dou, Chen, Shih-Hung, Sibaja-Hernandez, Arturo, Yadav, Sachin, Peralagu, Uthayasankaran, Yu, Hao, Alian, AliReza, Putcha, Vamsi, Parvais, Bertrand, Collaert, Nadine, Groeseneken, Guido

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