Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT von Alim, Mohammad Abdul, Ali, Mayahsa M., Rezazadeh, Ali A., Gaquiere, Christophe

Volltext

Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT von Alim, Mohammad A., Ali, Mayahsa M., Crupi, Giovanni

Volltext

Nonlinear distortion analysis for single heterojunction GaAs HEMT with frequency and temperature von Alim, Mohammad A, Ali, Mayahsa M, Rezazadeh, Ali A

Volltext

Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs von Alim, Mohammad A., Ali, Mayahsa M., Gaquiere, Christophe

Volltext

Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications von Alim, Mohammad A., Ali, Mayahsa M., Rezazadeh, Ali A., Gaquiere, C.

Volltext

On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT von Ali, Mayahsa M, Alim, Mohammad A, Rezazadeh, Ali A, Gaquiere, C

Volltext

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology von Alim, Mohammad A, Ali, Mayahsa M, Haris, Norshakila, Kyabaggu, Peter B K, Rezazadeh, Ali A

Volltext

Investigation of nonlinear distortion in double heterojunction GaAs based pHEMT subject to frequency and temperature von Alim, Mohammad A., Ali, Mayahsa M., Rezazadeh, Ali A.

Volltext

Effect of different separation frequencies of the two-tone input signal on the output power of GaN on SiC HEMT von Alim, Mohammad Abdul, Ali, Mayahsa M., Gaquiere, Christophe

Volltext

RF/Linearity figures of merit estimation for GaAs and GaN/SiC-based Nano-HEMTs von Abdul Alim, Mohammad, Ali, Mayahsa M., Rezazadeh, Ali A.

Volltext